本文基于亚阈值电流和表面势模型的基础上,采用商用器件模拟软件,建立了短沟道n-MOSFET的结构和物理模型,对器件的亚阈值电流进行了2-D数值模拟.计算了不同沟道掺杂浓度、氧化层厚度以及沟道长度对器件亚阚值电流的影响,并对模拟结果进行了系统的理论分析,数值模拟结果和解析模型能够在亚阈值区很好的吻合.
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