SOI(绝缘体上硅)器件在总剂量辐照下的主要性能退化是由于SOI器件的背栅阈值电压漂移引起的背沟道漏电.本文首先采用二维有限元方法,对辐射在SOI器件的埋氧层中的感生氧化物电荷进行模拟,然后分析此氧化物电荷对器件的外部电学特性的影响,建立了器件在最劣偏置下辐射引起的背栅MOSFET的阈值电压漂移模型,提取背栅MOSFET受辐射影响参数,以用于在SOI电路设计中准确的评估辐射对SOI电路的影响.模拟数据和试验数据具有很好的一致性.
参考文献
| [1] | Claudio Fiegna;Yang Yang;Enrico Sangiorgi;Anthony G. O'Neill .Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation[J].IEEE Transactions on Electron Devices,2008(1):233-244. |
| [2] | P. Lopez;J. Hauer;B. Blanco-Filgueira;D. Cabello .Analytical model of short-channel gate enclosed transistors using Green functions[J].Solid-State Electronics,2009(5):514-519. |
| [3] | Weimin Wu;Wei Yao;Gildenblat G.;Scholten A.J. .Compact Modeling of Junction Current in Dynamically Depleted SOI MOSFETs[J].IEEE Transactions on Electron Devices,2008(11):3295-3298. |
| [4] | H.J.Barnaby;M.L.Mclain;I.S.Esqueda.Modeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices[A].:273-280. |
| [5] | Radiation Effects in MOS Oxides[J].IEEE Transactions on Nuclear Science,2008(4 Pt.1):1833. |
| [6] | Djezzar, B.;Tahi, H.;Mokrani, A. .Why Is Oxide-Trap Charge-Pumping Method Appropriate for Radiation-Induced Trap Depiction in MOSFET?[J].IEEE transactions on device & materials reliability,2009(2):222-230. |
| [7] | Flament O.;Torres A.;Ferlet-Cavrois V. .Bias dependence of FD transistor response to total dose irradiation[J].IEEE Transactions on Nuclear Science,2003(6):2316-2321. |
| [8] | Liu S.T.;Balster S. .Worst case total dose radiation response of 0.35 /spl mu/m SOI CMOSFETs[J].IEEE Transactions on Nuclear Science,1999(6):1817-1823. |
| [9] | Ferlet-Cavrois V.;Colladant T. .Worst-case bias during total dose irradiation of SOI transistors[J].IEEE Transactions on Nuclear Science,2000(6):2183-2188. |
| [10] | Fleetwood D M;Tsao S S;Winokur P S.Total dose hardness assurance issues for SOI MOSFETs[J].IEEE Transactions on Nuclear Science:19. |
| [11] | User's Manual,MEDICI:Two Dimensional Device Simulation Program[M].Synopsis,2003 |
| [12] | Esqueda I.S.;Barnaby H.J.;Alles M.L. .Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies[J].IEEE Transactions on Nuclear Science,2005(6):2259-2264. |
| [13] | Liu S.T.;Balster S. .Worst case total dose radiation response of 0.35 /spl mu/m SOI CMOSFETs[J].IEEE Transactions on Nuclear Science,1999(6):1817-1823. |
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