综述了浮栅存储器的单粒子效应国外研究进展,对浮栅存储器控制电路及存储单元的单粒子效应进行详细分析和讨论.指出控制电路是浮栅存储器单粒子效应的关键部件以及重离子轰击使浮栅存储器数据保持特性退化;阐述了浮栅存储单元辐射后可能的电荷损失机制.最后指出纳米晶浮栅存储器具有好的抗辐射能力.
参考文献
| [1] | Oldham T. R.;Ladbury R. L.;Friendlich M.;Kim H. S.;Berg M. D.;Irwin T. L.;Seidleck C.;LaBel K. A. .SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile Memory[J].IEEE Transactions on Nuclear Science,2006(6 Pt.1):3217-3222. |
| [2] | S.K.Lai;V.K.Dahm;D.Guterman.Comparison and trends in today's dominant E2 technologies[J].IEDM Technical Digest,1986:580-582. |
| [3] | D.R.Roth;J.D.Kinnison;B.G.Carkhuff;J.R.Lander,G.S.Bognaski,K.Chao,G.M.Swift.SEU and TID Testing of the Samsung 128 Mbit and the Toshiba 256 Mbit Flash Memory[J].IEEE Radiation Effects Data Workshop,2000:96-99. |
| [4] | Tilan E.Langley;Paul Murray.SEE and TID Test Results of 1Gb Flash Memories[J].IEEE Radiation Effects Data Workshop,2004:58-61. |
| [5] | W.Wester;C.Nelson;J.Marriner.Proton Irradiation Effects on 2Gb Flash Memory[J].IEEE Radiation Effects Data Workshop,2004:68-71. |
| [6] | T.R.Oldham;M.Friendlich;J.W.Howard,Jr;M.D.Berg,H.S.Kim,T.L.Irwin,and K.A.LaBel.TID and SEE Response of an Advanced Samsung 4Gb NAND Flash Memory[J].IEEE Radiation Effects Data Workshop,2007:221-225. |
| [7] | Nguyen D.N.;Guertin S.M. .Radiation effects on advanced flash memories[J].IEEE Transactions on Nuclear Science,1999(6):1744-1750. |
| [8] | Schwartz H.R.;Nichols D.K. .Single-event upset in flash memories[J].IEEE Transactions on Nuclear Science,1997(6):2315-2324. |
| [9] | Oldham T.R.;Bennett K.W. .Total dose failures in advanced electronics from single ions[J].IEEE Transactions on Nuclear Science,1993(6):1820-1830. |
| [10] | G.Cellere;P.Pellati;A.Chimenton;A.Modelli,L.Larcher,J.Wyss,and A.Paccagnella .Radiation effects on floating-gate memory cells[J].IEEE Transactions on Nuclear Science,2001,48(06):2222-2228. |
| [11] | Larcher L.;Cellere G.;Paccagnella A.;Chimenton A.;Candelori A.;Modelli A. .Data retention after heavy ion exposure of floating gate memories: analysis and simulation[J].IEEE Transactions on Nuclear Science,2003(6):2176-2183. |
| [12] | T.P.Ma;P.V.Dressendorfer.Ionizing Radiation Effects in MOS Devices and Circuits[M].New York:wiley,1989:491-502. |
| [13] | J.M.Benedetto;H.E.Boesch .The relationship between 60Co and 10 keV X-ray damage in MOS devices[J].IEEE Transactions on Nuclear Science,1986,33(06):1317-1323. |
| [14] | T.R.Oldham .Recombination along the tracks of heavy charged particles in SiO films[J].Journal of Applied Physics,1985,57(08):2695-2702. |
| [15] | G.Cellere;A.PaeeagneUa;A.Visconti;M.Bonanomi,R.Harboe-S?rensen,A.Virtanen.Traces of Errors due to Single Ion in Floating Gate Memories[A]. |
| [16] | G.Cellere;L.Larcher;A.Paccagnellal;A.Visconti,M.Bonanomi.Single Event Leakage Current in Flash memory[A]. |
| [17] | G. Cellere;A. Paccagnella;A. Visconti;M. Bonanomi .Subpicosecond conduction through thin SiO_(2) layers triggered by heavy ions[J].Journal of Applied Physics,2006(7):074101-1-074101-10-0. |
| [18] | G.Cellere;A.Paceagnella;A.Visconti;M.Bonanomi,A.Candelori .Transient conductive path induced by a Single ion in 10 nm SiO2 Layers[J].IEEE Transactions on Nuclear Science,2004,51(06):3304-3311. |
| [19] | Cester A.;Wrachien N.;Gasperin A.;Paccagnella A.;Portoghese R.;Gerardi C. .Radiation Tolerance of Nanocrystal-Based Flash Memory Arrays Against Heavy Ion Irradiation[J].IEEE Transactions on Nuclear Science,2007(6):2196-2203. |
| [20] | 贺朝会,耿斌,陈晓华,王燕萍,彭宏论.浮栅ROM器件γ辐射效应实验研究[J].核电子学与探测技术,2002(04):344-347. |
| [21] | 何宝平,张凤祁,姚志斌.浮栅ROM器件γ射线、X射线和中子辐射效应实验研究[J].原子能科学技术,2007(04):489-492. |
| [22] | 何宝平,周荷琴,郭红霞,周辉,罗尹虹,姚志斌,张凤祁.大规模集成电路浮栅ROM器件总剂量辐射效应[J].半导体学报,2006(01):121-125. |
| [23] | 贺朝会,耿斌,杨海亮,陈晓华,王燕萍,李国政.浮栅ROM器件的辐射效应实验研究[J].物理学报,2003(01):180-187. |
| [24] | 贺朝会,耿斌,杨海亮,陈晓华,李国政,王燕萍.浮栅ROM器件辐射效应机理分析[J].物理学报,2003(09):2235-2238. |
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