欢迎登录材料期刊网

材料期刊网

高级检索

利用磁控溅射法制备了La0.96Sr0.04MnO3/SrNb0.01Ti0.99O3异质p-n结,研究了20-300 K温度范围内该p-n结的伏安特性,在20-300 K该p-n结表现出优异的整流特性,在温度大于100K时该异质p-n结I-V特性符合热激发模型.该异质结在170 K温度点表现出明显的金属-绝缘态转变,电阻温度曲线表现为绝缘态→金属态→绝缘态的转变过程.在5 T磁场作用下,随温度增大,正偏压时磁致电阻(MR)逐渐从负变为正;而在负偏压下MR逐渐从正变为负,并在-1 V的偏压下、金属-绝缘态转变温度点170 K处达到负的最大值-50.6%.

参考文献

[1] Jin S;Tiefel T H;McCormack M et al.Thousandfold Change in Resistivity in Magnetoresistive La-Ca-Mn-O Films[J].Science,1994,264(5157):413-415.
[2] Solovyev IV. .Charge ordering due to magnetic symmetry breaking - art. no. 177201[J].Physical review letters,2003(17):7201-0.
[3] Chuang Y D;Gromko A D;Dessau D S et al.Fermi Surface Nesting and Nanoscale Fluctuating Charge/Orbital Ordering in Colossal Magnetoresistive Oxides[J].Science,2001,292(5521):1509-1513.
[4] Chun-lian Hu;Kui-juan Jin;Peng Han;Hui-bin Lu;Leng Liao;Guo-zhen Yang .The effect of phase separation on the temperature dependent magnetoresistance in perovskite oxide heterojunction[J].Applied physics letters,2008(16):162106-1-162106-3-0.
[5] Jin K X;Zhao S G;Chen C L et al.Positive colossal magnetoresistance effect in ZnO/La0.7St0.3MnO3 heterostructure[J].Applied Physics Letters,2008,92(11):112512.
[6] Zhang X P;Xie B T;Xiao Y S et al.Current-induced colossal electroresistance in p-n heterostructure of La0.67Ca0.33MNO3-delta and Nb-doped SrTiO3[J].Appl Plays Lett,2005,87(07):072506.
[7] Jun Zhang;Hidekazu Tanaka;Tomoji Kawai .Rectifying characteristic in all-perovskite oxide film p-n junction with room temperature ferromagnetism[J].Applied physics letters,2002(23):4378-4380.
[8] Tanaka H.;Zhang J.;Kawai T. .Giant electric field modulation of double exchange ferromagnetism at room temperature in the perovskite manganite/titanate p-n junction - art. no. 027204[J].Physical review letters,2002(2):7204-0.
[9] Kwon C.;Fan Y.;Hundley MF.;Reagor DW.;Coulter JY.;Peterson DE.;Jia QX. .Large magnetoresistance in La0.7Sr0.3MnO3/SrTiO3/La0.7Sr0.3MnO3 ramp-edge junctions[J].Applied physics letters,1998(4):486-488.
[10] Yoshimatsu K;Horiba K;Kumigashira H et al.Thickness dependent electronic structure of La0.6Sr0.4MnO3 layer in SrTiO3/La0.6Sr0.4MnO3/SrTiO3 heterostructures studied by hard x-ray photoemission spectroscopy[J].Applied Physics Letters,2009,94(07):071901.
[11] Cheung S K;Cheung N W .Extraction of Schottky diode parameters from forward current-voltage characteristics[J].Applied Physics Letters,1986,49(02):85-87.
[12] Urushibara A;Moritomo Y;Arima T et al.Insulator-metal transition and giant magnetoresistance in La1-xSrxMnO3[J].Physical Review B:Condensed Matter,1995,51(20):14103-14109.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%