采用减压化学气相沉积的方法在Si衬底上制备了高质量的Si0.75Ge0.25/Si/Si0.86Ge0.14叠层材料,通过TEM、光学显微镜和XRD分析表明,外延的SiGe薄膜具有完好的晶格结构,平整的表面质量,SiGe薄膜处于完全应变状态.通过与Si上外延渐变缓冲层制备的SiGe材料比较发现,使用这种超薄的全应变SiGe叠层材料来制备SGOI,可以大大缩短制备周期,降低制备成本.
参考文献
| [1] | Zhiyuan Cheng;Jongwan Jung;Minjoo L Lee;Arthur J Pitera;Judy L Hoyt;Dimitri A Antoniadis;Eugene A Fitzgerald .Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI)[J].Semiconductor Science and Technology,2004(5):L48-L51. |
| [2] | T. Irisawa;S. Tokumitsu;T. Hattori;K. Nakagawa;S. Koh;Y. Shiraki .Ultrahigh room-temperature hole Hall and effective mobility in Si_(0.3)Ge_(0.7)/Ge/Si_(0.3)Ge_(0.7) heterostructures[J].Applied physics letters,2002(5):847-849. |
| [3] | C. W. Leitz;M. T. Currie;M. L. Lee;Z.-Y. Cheng;D. A. Antoniadis;E. A. Fitzgerald .Hole mobility enhancements in strained Si/Si_(1-y)Ge_(y) p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si_(1-x)Ge_(x) (x<y) virtual substrates[J].Applied physics letters,2001(25):4246-4248. |
| [4] | Tsutomu Tezuka;Shu Nakaharai;Yoshihiko Moriyama;Naoharu Sugiyama;Shin-ichi Takagi .High-Mobility Strained SiGe-on-Insulator pMOSFETs With Ge-Rich Surface Channels Fabricated by Local Condensation Technique[J].IEEE Electron Device Letters,2005(4):243-245. |
| [5] | Tezuka T;Nakaharai S;Moriyama Y;Hirashita N;Toyoda E;Numata T;Irisawa T;Usuda K;Sugiyama N;Mizuno T .Strained SOI/SGOI dual-channel CMOS technology based on the Ge condensation technique[J].Semiconductor Science and Technology,2007(1):S93-S98. |
| [6] | Gianni Taraschi;Arthur J. Pitera;Eugene A. Fitzgerald .Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques[J].Solid-State Electronics,2004(issue 8):1297-1305. |
| [7] | Houghton D;Gibbings C;Tuppen C et al.Equilibrium critical thickness for SiGe strained layers on (100) Si[J].Applied Physics Letters,1990,56:460-462. |
| [8] | Currie MT.;Langdo TA.;Leitz CW.;Fitzgerald EA.;Samavedam SB. .Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing[J].Applied physics letters,1998(14):1718-1720. |
| [9] | Hartmann J M;Gallas B;Zhang J et al.Gas-source molecular beam epitaxy of SiGe virtual substrates[J].Semiconductor Science and Technology,2000,15:370-377. |
| [10] | Ryang Wie C .High resolution x-ray diffraction characterization of semiconductor structures[J].Materials Science and Engineering R:Reports,1994,13(01):1-56. |
| [11] | Nobuyuki Sugii;Digh Hisamoto;Katsuyoshi Washio;Natsuki Yokoyama;Shin'ichiro Kimura .Performance enhancement of strained-Si MOSFETs fabricated on a chemical-mechanical polished SiGe substrate[J].IEEE Transactions on Electron Devices,2002(12):2237-2243. |
| [12] | Carns TK.;Wang KL.;Tanner MO. .CHEMICAL ETCHING OF SI1-XGEX IN HF-H2O2-CH3COOH[J].Journal of the Electrochemical Society,1995(4):1260-1266. |
| [13] | Godbey D J;Krist A H;Hobart K D et al.Selective Removal of Sil-XGex from (100) Si Using HNO3 and HF[J].Journal of the Electrochemical Society,1992,139(10):2943-2947. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%