本文采用直流磁控溅射法和多次沉积与掩膜技术,在n+Si(100)衬底上制备了一系列厚度不同的ZnO薄膜,表面镀Au的探针与ZnO/n+-Si构成了一系列ZnO层厚不同的Au/ZnO/n+-Si薄膜压敏电阻器.利用X射线衍射确定沉积的ZnO薄膜为高度c轴(0002)取向的晶体薄膜,利用紫外-可见透射光谱对沉积的ZnO薄膜的厚度进行了定标.分别测量了不同厚度的处Au/ZnO/n+-Si结构的I-V特性曲线,从而得到了阈值电压与ZnO薄膜厚度之间的关系.结果表明:随着ZnO薄膜厚度的增加,Au/ZnO/n+-Si压敏电阻器的阚值电压线性增大.因此,可以通过控制ZnO层的厚度精确控制压敏电阻器的阈值电压.
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