欢迎登录材料期刊网

材料期刊网

高级检索

本研究工作采用硅离子注入和高温退火工艺对SIMOX材料的BOX层进行总剂量辐射加固.辐射实验结果证明了该加固方法的有效性.PL谱和HRTEM图像显示了硅离子注入及退火工艺在材料的BOX层中引入了Si纳米晶,形成电子陷阱能级,有效俘获电子,从而提高了材料BOX层的抗总剂量辐射能力.

参考文献

[1] Jean-Pierre Colinge.Silicon-on-Insulator Technology:Materials to VLSI[M].Kluwer Academic Publishers,1997
[2] Ferlet-Cavrois V.;Quoizola S. .Total dose induced latch in short channel NMOS/SOI transistors[J].IEEE Transactions on Nuclear Science,1998(6):2458-2466.
[3] Ferlet-Cavrois V.;Colladant T. .Worst-case bias during total dose irradiation of SOI transistors[J].IEEE Transactions on Nuclear Science,2000(6):2183-2188.
[4] S.T.Liu;W C Jenkins;H L Hughes .Total dose hard 0 35 um SOI CMOS technology[J].IEEE Transactions on Nuclear Science,1988,45(06):2442-2449.
[5] Schwank J.R.;Ferlet-Cavrois V.;Shaneyfelt M.R.;Paillet P.;Dodd P.E. .Radiation effects in SOI technologies[J].IEEE Transactions on Nuclear Science,2003(3):522-538.
[6] A. Giraldo;A. Paccagnella;A. Minzoni .Aspect ratio calculation in n-channel MOSFETs with a gate-enclosed layout[J].Solid-State Electronics,2000(6):981-989.
[7] Liu S.T.;Balster S. .Worst case total dose radiation response of 0.35 /spl mu/m SOI CMOSFETs[J].IEEE Transactions on Nuclear Science,1999(6):1817-1823.
[8] H.L.Hughes et al.Radiation Effects and Hardening of MOS Technology:Devices and Circuits[J].IEEE Transactions on Nuclear Science,2003,50(03):500-521.
[9] T.S. Iwayama;D.E. Hole;I.W. Boyd .Characteristic photoluminescence band in Si~+-implanted SiO_2 grown on Si wafer[J].Microelectronics and reliability,2000(4/5):849-854.
[10] Nicklaw CJ.;Pantelides ST.;Fleetwood DM.;Schrimpf RD. Galloway KF.;Wittig JE.;Howard BM.;Taw E.;McNeil WH.;Conley JF.;Pagey MP. .Defects and nanocrystals generated by Si implantation into a-SiO2[J].IEEE Transactions on Nuclear Science,2000(6 Pt.3):2269-2275.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%