近年来,掺硼金刚石(BDD)膜因具备独特的优异性能而作为电极材料已经受到很大的关注.本文通过MPCVD法在高掺杂硅衬底上生长掺硼金刚石膜,并用四探针、扫描电镜、激光拉曼和电化学工作站对其进行了检测,发现所制备的掺硼金刚石膜电导率达10-2Ω·cm,同时发现金刚石膜质量因硼原子的掺入而有所下降,采用循环伏安法研究其电化学性质.结果表明,与Pt电极相比(1.8V和-1×10-3～3×10-4A),BDD电极具有很宽的电化学窗口(2.8～3.2V),较低的背景电流(-3×10-6～2×1O-6A);选用高掺杂的硅作基底使导线从导电基底接入,能够为Si/BDD电极提供更多工作面积从而节约制备成本;在铁氰化钾电解液中,表面所进行的电化学反应具有较好的准可逆性,并且电极表面具有较好的稳定性.对有机物苯酚的催化氧化检测发现:与Pt电极相比,BDD电极氧化能力强,且氧化产物简单彻底,因此可以作为一种理想的电极材料.
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