结合光刻和金属援助硅化学刻蚀法成功地制备出了用于光伏型光电化学池的图形化硅纳米线阵列光阳极,并表征和研究了其光电转换性能.扫描电子显微镜和漫反射光谱测试表明光阳极表面为多孔状,在300nm - 1000nm的光谱范围之内光反射率低于5％.基于该光阳极的光电化学池具有明显的光响应,光电转换效率为0.33％.通过光电转换过程分析,光生载流子在硅纳米线/电解液界面上的复合可能是导致较低光转换效率的主要原因.
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