采用磁控溅射的方法,两个单靶依次在Si (100)基底上循环5次溅射制备了Zn/Sb多层复合纳米薄膜,并研究了固定调制周期为40nm时,Zn和Sb的调制比分别为1:1、3:2和4:1的三种情况下,Zn/Sb复合薄膜的Seebeck系数、电导率和功率因子在160K -250K温度范围内随温度的变化情况.采用XRD、AFM对其结构和表面形貌进行分析,发现制备的薄膜表面光滑、致密,无大颗粒,呈现出晶面择优生长的现象.实验结果表明:当调制比为4:1时,Zn/Sb薄膜的功率因子最高,且其最大值达到在174K时的7543.54μW/mK2,但随着温度的升高,其值迅速的下降,变化趋势和幅度都很明显.
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