采用直流反应磁控溅射技术,制备获得ZnO:Al( ZAO)薄膜,研究溅射功率、靶基距关键制备工艺参数对ZAO薄膜的组织结构、光、电性能的影响,并获得了最佳的溅射功率、靶基距制备参数,利用该参数制备ZAO薄膜,能够获得在可见光范围内的平均透射率》80％,最低电阻率为4.5×10-4Ω·cm的ZAO薄膜,其光电性能均满足应用需求.
参考文献
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