采用电化学阳极氧化法,在不同浓度比的草酸/硫酸混合电解液中制备了系列AAO薄膜样品,考察了用250nm波长激发时,从0℃到600℃温度范围内AAO薄膜退火后的光致发光(PL)特性.结果表明,AAO薄膜在300 - 500nm范围内有一个较强的PL带,在0℃时随硫酸浓度的增加,AAO薄膜的PL强度逐渐增强,发光峰位逐渐蓝移；退火温度对AAO薄膜的PL强度和峰位有很大的影响.实验表明AAO薄膜的PL与薄膜内不同存在或分布形式的草酸杂质形成的250和296nm发光中心密切相关.
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