采用化学气相沉积法(PECVD)在石英基片上制备氮化硅薄膜,应用MEMS工艺将氮化硅薄膜制作成双端固定的微结构梁,纳米压痕仪测量氮化硅薄膜的杨氏模量表明其值在136～172 Gpa之间,用曲率半径法测试薄膜的残余应力,并对微结构梁的弹性系数进行计算,结果表明弹性系数值在11.4 ～ 57 N/m.之间,根据实验所得弹性系数对微结构梁的驱动电压进行计算,其驱动电压在32.8 ～ 73V之间,微结构梁的实际驱动电压测得为34 ～ 60V.
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