研究了一种具有OB(Oxide By - passed)结构的SOI LDMOS器件,分析了该器件的耐压机理以及结构特点,并通过SILVACO TCAD软件对该结构进行三维数值仿真.通过仿真验证可知,该结构通过类超结(SJ)电场调制技术获得了与超结器件类似的性能,该结构与SJ LDMOS在相同的尺寸情况下尽管耐压相同,但导通电阻从3.81mΩ·cm2降低到1.96mΩ·cm2,同时克服了SJ LDMOS器件制造工艺上高深宽比以及电荷浓度难易精确匹配的缺陷.
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