溶胶凝胶法制备ZnO:Ga作为电流扩散层的LED光电性能研究

功能材料与器件学报 , 2012, 18(3): 238-242. doi: 10.3969/j.issn.1007-4252.2012.03.011

溶胶凝胶法制备ZnO:Ga作为电流扩散层的LED光电性能研究

李倩 ^1, , 王万晶 ^2, , 李喜峰 ^3, , 张建华 ^4, , 吕建国 ^5,

1.上海大学新型显示技术及应用集成教育部重点实验室上海200072;上海大学材料科学与工程学院上海200072

2.上海大学新型显示技术及应用集成教育部重点实验室上海200072

3.上海大学新型显示技术及应用集成教育部重点实验室上海200072;浙江大学硅材料国家重点实验室杭州310027

4.上海大学新型显示技术及应用集成教育部重点实验室上海200072

5.浙江大学硅材料国家重点实验室杭州310027

基金项目: 上海市科委高新技术重大专项基金(10dz1100102) 国家自然科学基金委的项目资助(61006005) 浙江大学硅材料国家重点实验室开放基金(SKL2010-9)

关键词：溶胶凝胶 , LED , GZO

Optical and Electrical Properties of the LED Using ZnO:Ga Film as Current Diffusion Layer by Sol-gel Technique

采用溶胶凝胶法制备了ZnO:Ga (GZO)透明导电薄膜,并用做GaN基LED的电流扩散层.研究表明,GZO薄膜为多晶薄膜,透光率大于80％,粗糙度为Ra 4.6nm,制备的LED的开启电压为2.4V,并成功的点亮LED芯片.

参考文献

[1]	Shuji Nakamura .The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes[J].Science,1998(5379):956-961.
[2]	Toshio Nishida;Hisao Saito;Naoki Kobayashi .Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN[J].Applied physics letters,2001(6):711-712.
[3]	J. K. Sheu;Y. K. Su;G. C. Chi;P. L. Koh;M. J. Jou;C. M. Chang;C. C. Liu;W. C. Hung .High-transparency Ni/Au ohmic contact to p-type GaN[J].Applied physics letters,1999(16):2340-2342.
[4]	Minami T .Transparent conducting oxide semiconductors for transparent electrodes[J].Semiconductor Science and Technology,2005(4):S35-S44.
[5]	V. Bhosle;A. Tiwari;J. Narayan .Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO[J].Applied Physics Letters,2006(3):032106-1-032106-3-0.
[6]	Guillen C;Herrero J .High conductivity and transparent ZnO : Al films prepared at low temperature by DC and MF magnetron sputtering[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(2):640-643.
[7]	Tsay C Y;Wu C W;Lei C M et al.Microstmctural and optical properties of Ga-doped ZnO semiconductor thin films prepared by sol-gel process[J].Thin Solid Films,2010,519(05):1516-1520.
[8]	H. J. Ko;Y. F. Chen;S. K. Hong .Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy[J].Applied physics letters,2000(23):3761-3763.
[9]	Osamu Nakagawara;Yutaka Kishimoto;Hiroyuki Seto;Yoshihiro Koshido;Yukio Yoshino;Takahiro Makino .Moisture-resistant ZnO transparent conductive films with Ga heavy doping[J].Applied physics letters,2006(9):091904-1-091904-3-0.
[10]	Li X;Liu H Y;Ni X et al.InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide[J].Physical Status Solidi,2010,207(08):1993-1996.
[11]	王书方,张建华,李喜峰.ZnO：Ga透明电极LED的制备及性能分析[J].半导体技术,2010(05):427-430,461.
[12]	Hirata G A;McKittrick J;Cheeks T et al.Synthesis and optelectronic characterization of gallium doped zinc oxide transparent electrodes[J].Thin Solid Films,1996,288(1-2):29-31.
[13]	Liu Zhen,Wang Xiaofeng,Yang Hua,Duan Yao,Zeng Yiping.A Ga-doped ZnO transparent conduct layer for GaN-based LEDs[J].半导体学报,2010(09):17-20.
[14]	Keunbin Y;Lee C .Dependence of the electrical and optical properties of sputter-deposited ZnO:Ga film in the annealing temperature,time,and atmosphere[J].Journal of Materials Science:Materials in Electronics,2007,18:385-390.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

溶胶凝胶法制备ZnO:Ga作为电流扩散层的LED光电性能研究

Optical and Electrical Properties of the LED Using ZnO:Ga Film as Current Diffusion Layer by Sol-gel Technique

参考文献