采用化学气相沉积技术(CVD)在铜箔衬底上实现了石墨烯单晶畴的可控生长,并用两步生长法制备了不同单晶畴尺寸的多晶石墨烯连续膜.利用光学显微镜和拉曼光谱仪对石墨烯的形貌和结构进行了表征.通过对转移到Si02衬底上石墨烯连续膜的霍尔测试发现,石墨烯晶畴尺寸变化对其连续膜的电学性能影响显著.石墨烯连续膜的晶畴尺寸越大,其方块电阻越小,载流子迁移率越高.
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