在中国原子能科学研究院HI-13串列加速器上建立了用Q3D磁谱仪动量分析和△E-E粒子分辨对材料表面进行高分辨的弹性反冲探测分析技术．用100 MeV127I对C/LiF多层样品的深度分布分析表明，表面分辨达到1.2 nm．所建立的△E(气体)-E(半导体)望远镜探测器可同时分析从轻至中重的所有元素．实测了新光电材料GaN，La2SrCuO4超导膜和新超硬材料C3N4(Si)等样品．
High resolution depth profiling technique with elastic recoil detection analysis has been developed at the HI-13 tandem accelerator of CIAE. A depth resolution of 1.2 nm was achieved at the surface of the samples with the Q 3D magnetic spectrometer and the focal plane detector. From light to medium heavy elements were simultaneous analyzed with a small ΔE-E telescope. The method was applied to depth profile analysis of C/LiF multilayers, La2SrCuO4 superconductor and GaN foil samples.
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