在理论分析的基础上, 提出了一种利用兰州重离子加速器提供的高能12C离子模拟质子引起单粒子效应的途径. 在保证核反应机制是引起单粒子效应主要机制的前提下, 用高能12C离子可以模拟质子在功率金属-氧化物-半导体场效应晶体管中引起的单粒子烧毁以及单粒子栅极击穿, 获得质子单粒子效应的饱和截面, 定性研究质子单粒子效应的角度效应, 还可以作为高能质子单粒子效应实验前的预备实验. 该方法拓展了兰州重离子加速器加速的轻的重离子在单粒子效应实验研究方面的应用, 对现阶段国内开展质子单粒子效应实验研究具有重要意义.
参考文献
[1] | Adams L, Daly E J, Harboe-Sorensen R, et al. A Verified Proton Induced Latch-up in Space [J]. IEEE Trans Nucl Sci, 1992, 39(6): 1 804-1 808. |
[2] | Adolphsen J W. First Observation of Proton Induced Power MOSFET Burnout in Space: The CRUX experiment on APEX [J]. IEEE Trans Nucl Sci, 1996, 43(6): 2 921-2 926. |
[3] | Petersen E L. The Relationship of Proton and Heavy Ion Upset Thresholds [J]. IEEE Trans Nucl Sci, 1992, 39(6): 1 600-1 604. |
[4] | Rollins J G. Estimation of Proton Upset Rates from Heavy Ion Test Data [J]. IEEE Trans Nucl Sci, 1990, 37(6): 1 961-1 964. |
[5] | Petersen E L. Approaches to Proton Single Event Rate Calculations [J]. IEEE Trans Nucl Sci, 1996, 43(6): 496-504. |
[6] | Teleaty S E, Farrell G E, McNulty P J. Charge Deposition in Thin Slabs of Silicon Induced by Energetic Protons [J]. IEEE Trans Nucl Sci, 1983, 30(6): 4 394-4 397. |
[7] | 吴定清, 李文新, 孙彤玉, 等. 20-46 MeV 12C离子和Cu 相互作用中靶余核的反冲性质研究[J]. 高能物理与核物理, 1996, 20(1): 13-20. |
[8] | Koga R, Crain S H, Crain W R, et al. Comparative SEU Sensitivities to Relativistic Heavy Ions [J]. IEEE Trans Nucl Sci, 1998, 45(6): 2 475-2 482. |
[9] | Musseau O, Cavrois V F, Campbell A B, et al. Comparison of Single Event Phenomena for Front/Back Irradiations [J]. IEEE Trans Nucl Sci, 1997, 44(6): 2 250-2 255. |
[10] | Kuboyama S, Matasuda S, Kanno T, et al. Single Event Burnout of Power MOSFETs Caused by Nuclear Reaction with Heavy Ions [J]. IEEE Trans Nucl Sci, 1994, 41(6): 2 210-2 215. |
[11] | Wilcke W W, Birkelund J R, Wollersheim H J, et al. Reaction Parameters for Heavy-ion Collision[J]. Atomic Data and Nuclear Data Tables, Academic Press, 1980(9/11), 25(5/6): 389-619. |
[12] | Bauhoff W. Tables of Reaction and Total Cross Section for Proton-nucleus Scattering Below 1 GeV [J]. Atomic Data and Nuclear Data Tables, 1986, 35(6): 429-447. |
[13] | Wheatley C F, Titus J L. Proton-induced Dielectric Breakdown of Power MOSFETs [J]. IEEE Trans Nucl Sci, 1998, 45(6), 2 891-2 897. |
[14] | Johnston A H, Swift G H, Edmonds L D. Latchup in Integrated Circuits from Energetic Protons [J]. IEEE Trans Nucl Sci, 1997, 44(6): 2 367-2 377. |
[15] | Reed R A, McNulty P J, Abdel-Kader W G. Implication of Angle of Incidence in SEU Testing of Modern Circuits [J]. IEEE Trans Nucl Sci, 1994, 41(6): 2 049-2 954. |
[16] | Ecoffet R, Duzellier S, Falguère D, et al. Low LET Cross-section Measurements Using High Energy Carbon Beam [J]. IEEE Trans Nucl Sci, 1997, 44(6): 2 230-2 236. |
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