介绍了MOS结构剂量探测器的基本测量原理, 回顾了国内外利用MOS结构作为剂量探测器的发展过程和研究现状, 分析了MOS结构剂量探测器的主要性能指标以及其在核辐射剂量监测和空间环境监测等领域的应用前景.
参考文献
[1] | Shaneyfelt, Fleetwood, Schwank, et al. Charge Yield for Cobalt-60 and 10 keV X-ray Irradiations of MOS Devices[J]. IEEE Trans Nucl Sci, 1991, 36(6): 1 187. |
[2] | Holmes-Siedle. The Space Charge Dosimeter: General principles of radiation dosimetry[J]. Nucl Instr and Meth, 1974, 121: 169. |
[3] | Kelleher, Sullivan, Ryan, et al. Development of the Radiation Sensitivity of MOS Dosimeters[J]. IEEE Trans Nucl Sci, 1992, 39(3): 342. |
[4] | Sarrabayrouse. MOS Radiation Dosimeter: Sensitivity and stability[C]. Proc 1st Eur Conf on Radiation and it Effects on Components and Systems (RADECS '91), France, 1991, 57. |
[5] | Rosenfeld, Barabash, Khivrich, et al. Development of Semiconductor Sensors for Mixed Gamma-neutron Fields[J]. J Radi Prot Aust, 1994, 12: 156. |
[6] | Boesch, Taylor. Charge and Interface State Generation in Field Oxides[J]. IEEE Trans Nucl Sci, 1984, 31(6): 1 273. |
[7] | Holmes-Siedle, Adams. RADFET: A review of the use of metal-oxide-silicon devices as integraring dosimeters[J]. Radi Phys Chem, 1986, 28(2): 235. |
[8] | Ensell G, Holmes-Siedle, Adams. Thick Oxide pMOSFET Dosimeters for High Energy Radiation[J]. Nucl Instr and Meth, 1988, A269: 655. |
[9] | Litovchenko, Barabash, Kuts, et al. P-Channel MOS Sensor for Measurement of Emergency Gamma and Neutron Radiation[J]. Radi Prot Dosi, 1996, 66(1-4): 225. |
[10] | Kumurdjian, Sarrabayrouse. Unbiased Metal Oxide Semiconductor Ionising Radiation Dosimeter[J]. Radi Prot Dosi, 1995, 61(1-3): 19. |
[11] | Kelleher A, Lane, Adams. A Design Solution to Increasing the Sensitivity of pMOS Dosimeters: The stacked RADFET approach[J]. IEEE Trans Nucl Sci, 1995, 41(1): 48. |
[12] | Kelleher A, McDonnell, Neill, et al. Investigation into the re-use of pMOS Dosimeters[J]. IEEE Trans Nucl Sci, 1994, 41(3): 445. |
[13] | Savic, Stankovic Kovacevic, et al. Energy Dependence of pMOS Dosimeters[J]. Radiat Prot Dosi, 1996, 64(3): 205. |
[14] | 范隆, 郭旗, 任迪远等. pMOSFET多管级联结构辐照响应特性研究[J]. 核电子学与探测技术, 2000, 20(6): 420. |
[15] | 范隆, 张国强, 严荣良等. 偏置对pMOS剂量计辐照响应的影响[J]. 半导体学报, 2000, 21(2): 179. |
[16] | 范隆, 靳涛, 何承发等. pMOS场效应管的X射线和低能强电子束的瞬态电离辐照效应[J]. 核技术, 1998, 21(9): 534. |
[17] | Sarrabayrouse, Bellaouar, Rossel. Derive Temporelles Post-irradiation dans les Dosimetres MOS[J]. Rev Phys Appl, 1986, 21: 131. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%