加速器束流脉冲化及氢二次离子发射研究

原子核物理评论 , 2004, 21(1): 34-37. doi: 10.3969/j.issn.1007-4627.2004.01.008

加速器束流脉冲化及氢二次离子发射研究

丁富荣 ^1, , 史平 ^2, , 王尧 ^3, , 聂锐 ^4, , 沈定予 ^5, , 马宏骥 ^6,

1.北京大学技术物理系,北京,100871

2.北京大学技术物理系,北京,100871

3.北京大学技术物理系,北京,100871

4.北京大学技术物理系,北京,100871

5.北京大学技术物理系,北京,100871

6.北京大学技术物理系,北京,100871

基金项目: 北京大学校科研和教改项目国家自然科学基金(10175005)

关键词：飞行时间 , 团簇离子 , 二次离子发射 , 阻止本领

Application of HTS in Pulsed Ion Beam of Sccelerator and Study on Secondary Ion Emission of Hydrogen from Carbon Nanotubes under Bombardments of MeV Si and Si2 Clusters

详细介绍了快速高压晶体管开关在加速器束流脉冲化和用于二次离子测量的加速器飞行时间谱仪上的应用. 利用飞行时间法研究了碳纳米管在不同能量的Si和Si2团簇离子轰击下氢二次离子的发射. 实验结果表明, 在每个原子质量单位的速度为2.5×108 cm/s以上, Si和Si2离子引起的氢二次离子的发射主要受电子阻止过程控制; 在每个原子质量单位的速度为2.5×108 cm/s以下和Si2团簇离子轰击的情况下, 氢二次离子的发射产额明显增加, 团簇离子在靶表面的核能损增强效应起主要作用.

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加速器束流脉冲化及氢二次离子发射研究

Application of HTS in Pulsed Ion Beam of Sccelerator and Study on Secondary Ion Emission of Hydrogen from Carbon Nanotubes under Bombardments of MeV Si and Si2 Clusters

参考文献