质子注入和快速退火对GaAs/AlGaAs量子阱能级结构的调整

量子电子学报 , 2000, 17(1): 31-35. doi: 10.3969/j.issn.1007-5461.2000.01.007

质子注入和快速退火对GaAs/AlGaAs量子阱能级结构的调整

李娜 ^1, , 李宁 ^2, , 陆卫 ^3, , 刘兴权 ^4, , 窦红飞 ^5, , 沈学础 ^6, , Fu Lan ^7, , Tan H H ^8, , Jagadish C ^9, , Johnston M B ^10, , Gal M ^11,

1.中国科学院上海技术物理研究所, 红外物理国家实验室上海 200083

2.中国科学院上海技术物理研究所, 红外物理国家实验室上海 200083

3.中国科学院上海技术物理研究所, 红外物理国家实验室上海 200083

4.中国科学院上海技术物理研究所, 红外物理国家实验室上海 200083

5.中国科学院上海技术物理研究所, 红外物理国家实验室上海 200083

6.中国科学院上海技术物理研究所, 红外物理国家实验室上海 200083

7.Department of Electronic Materials Engineering, the Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200, Australia

8.Department of Electronic Materials Engineering, the Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200, Australia

9.Department of Electronic Materials Engineering, the Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200, Australia

10.School of Physics, the University of New South Wales, Sydney NSW 2052, Australia

11.School of Physics, the University of New South Wales, Sydney NSW 2052, Australia

关键词：质子注入 , 快速退火 , GaAs/AlGaAs , 量子阱

Modify of GaAs/AlGaAs Quantum Well by Proton Implantation and Rapid Thermal Annealing

Keywords： H+ ion implantation , rapid thermal annealing , GaAs/AlGaAs , QWIP

摘要　本文介绍利用界面混合技术对GaAs/AlGaAs量子阱结构进行微调，通过荧光光谱和光响应电流谱给出了质子注入和快速退火对禁带宽度及导带内子带位置的影响，荧光光谱峰位随注入剂量(5× 1014～5×1015～cm-2)的增加从766～nm持续蓝移至753～nm，光响应峰值波长从8.2～μm移至10.3～μm。

In this paper we shall demonstrate the use of intermixing in modify of GaAs/AlGaAs quantum-well. The paper shows that proton implantation can achieve large energy shifts after standard annealing procedures. The PL and photoresponse spectrum were measured as a function of ion dose in the range 5×1014～cm-2 to 2.5×1015～cm-2, the peak photoresponse wavelength was tunable between 8.4～μm to 10.2～μm and PL peak from 780～nm to 850～nm.

参考文献

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[3]	Gunapala S D, Park J S, Sarusi G et al. 128× 128 GaAs/AlGaAs quantum well infrared photodetector focal plane array for imaging at 15～μm. IEEE Trans. Electron Devices, 1997, 44(1): 45
[4]	Chen C J, Choi K K, Chang W H et al. Two-color corrugated quantum-well infrared photodetector for remote temperature sensing. Appl. Phys. Lett., 1998, 72(1): 7
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[6]	Tan H H, Williams J S, Jagadish C et al. Large energy shifts in GaAs-AlGaAs quantum wells by proton irradiation-induced intermixing. Appl. Phys. Lett., 1996, 68: 1996
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[8]	Li E H, Weiss B L, Chan K S. Effect of interdiffusion on the subbands in an AlxGa1-xAs single-quantum-well structure. Phys. Rev. B, 1992, 46(23): 1518
[9]	Lee Alex S W, Li E H. Effect of interdiffusion of quantum well infrared photodetector. Appl. Phys. Lett., 1996, 69(23): 518

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