本文提出一种多阱能量表象方法用来分析应变补偿多量子 阱的价带结构。这一方法是把应变补偿多量子阱的价带Γ点z方向重 轻空穴的能量本征函数作为基矢量建立能量表象，把非Γ点的重轻空 穴的能量本征函数按这些基矢量进行傅里叶级数展开，带入 Kohn-Luttinger Hamiltonian(KLM)方程中得到相应的能量特征矩阵， 进 而得到其非Γ点的重轻空穴的能量本征值和相应的本征矢。与k.p方法 相比，这一方法的优点在于能够有效地分析出阱数和阱间距离对应变 补偿多量子阱的能带结构产生的影响，并且所得的能量特征矩阵的阶 数要小得多，很容易在微机上进行运算。
The multi-well energy representation technique is developed for analyzing the valence band structures of strain-compensated multiple quantum well (SCQW) systems. Taking the energy eigenfunctions of both the heavy- and light-holes at the Γ point as the base vectors to set up the energy representation, we solve the Kohn-Luttinger Hamiltonian (KLM) equation in this representation, and obtain the quantized energy bands and the energy eigenvectors of both the heavy- and light-holes at the non- Γ points. By using this technique, the effects of the number of wells and the distance between wells on the valence band structures of SCQW systems can be analyzed efficiently, and the energy characteristic matrix obtained by this technique is much smaller than that of the k.p method, so the calculation can be performed more easily with a microcomputer.
参考文献
| [1] | Bastard G, Brum J A. Electronic states in semiconductor heterostructures. IEEE J. Quantum Electron., 1986, QE-22(9): 1625～1644 |
| [2] | Eppenga R, Schuurmans M F H, Colak S. New k.p theory for GaAs/Ga1-xAlx-type quantum wells. Phys. Rev. B, 1987, 36(3): 1554～1564 |
| [3] | Chuang S L. Efficient band-structure calculations of strained quantum wells. Phys. Rev. B, 1991, 43(12): 9649～9661 |
| [4] | Hong S C, Jaffe M, Singh J. Theoretical studies of optical modulation in lattice matched and strained quantum wells due to transverse electric field. IEEE J. Quantum Electron., 1987, QE-23(12): 2181～2195 |
| [5] | Jaffe M, Singh J. Band structure and charge control of n- and p-type pseudomorphic modulation-doped field-effect transistors. J. Appl. Phys., 1989, 65(1): 329～338 |
| [6] | Loehr J P, Singh J. Theroetical studies of effect of strain on the performance of strained quantum well lasers based on GaAs and InP technology. IEEE J. Quantum Electron., 1991, 27(3): 708～716 |
| [7] | Kraus J, Deimel P P. Calculation of the propagation constant of optical modes in multiquantum well structures. IEEE J. Quantum Electron., 1990, 26(5): 824～826 |
| [8] | Kumar M, Boyd J T, Jackson H E et al. Birefringent properties of GaAlAs multiple quantum well optical waveguides. IEEE J. Quantum Electron., 1992, 28(7): 1678～1688 |
| [9] | Nido M, Naniwae K, Shimizu J et al. Analysis of differential gain in InGaAs-InGaAsP compressive and tensile strained quantum-well lasers and its application for estimation of high-speed modulation limit. IEEE J. Quantum Electron., 1993, 29(3): 885～895 |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%