为了证实某一研究结果的正确性，常常需要采用两种以上 相互独立的方法对同一物理量进行测量或计算。本文采用新颖的远红 外光谱技术和常用的Hall、C-V 等电学测量技术同时对MBE生长的 ZnSe:Cl,N薄膜中的载流子浓度进行评价研究， 发现电学法和光学法测 量的结果可以很好地吻合，从而确认了ZnSe宽禁带蓝绿色发光材料中 较高的掺杂水平。
To verify the correctness of a research result, more than two kinds of independent method are often needed to examine or calculate the same physics quantity. The carrier concentration in both n-type ZnSe:Cl and p-type ZnSe:N crystal films is evaluated with Hall and C-V technique, as well as far infrared spectrum technique. It is found that the experiment data obtained with these two kinds of way coincide well with each other. Therefore, we can confirm the ZnSe, a widegap semiconductor material for blue/green light emitting devices, of high doping level.
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