GaAs双光子诱导光吸收对调Q激光器脉冲的影响

量子电子学报 , 2000, 17(2): 145-150. doi: 10.3969/j.issn.1007-5461.2000.02.008

GaAs双光子诱导光吸收对调Q激光器脉冲的影响

李平 ^1, , 王青圃 ^2, , 张其第 ^3, , 马宝民 ^4, , 李颖 ^5, , 黄伯标 ^6, , 刘续民 ^7,

1.山东大学光学系济南 250100

2.山东大学光学系济南 250100

3.山东大学光学系济南 250100

4.山东大学光学系济南 250100

5.山东临沂交通技校临沂225206

6.山东大学晶体材料研究所济南250100

7.山东大学晶体材料研究所济南250100

基金项目: 国家重点实验室基金高等学校博士学科点专项科研项目

关键词： GaAs , 双光子诱导吸收 , 调Q激光器 , 展宽

Effects of Two-photon Induced Light Absorption of GaAs on Laser Emission

Keywords： GaAs , two-photon-induced absorption , Q-switched laser , pulse lengthening

研究了利用GaAs的双光子诱导吸收实现调Q激光脉冲展宽的原理,分析了GaAs 的光吸收特性,建立了激光器速率方程并给出了数值解。在实验上,将GaAs薄片放入一电光调Q Nd:YAG激光器谐振腔中,同理论预测一样,激光输出脉冲的能量、峰值功率都低于常规调Q激光脉冲,同时脉冲宽度得到了展宽。

We have demonstrated the theory of utilizing internal two-photon-induced light absorption of semiconductor GaAs to accomplish Q-switched pulse lengthening. The rate equations are solved and the experiments are performed with an electrooptic Q-switching Nd:YAG laser with a GaAs sample in its cavity. As predicted by the theory that the output intensity and output energy both decrease and pulse length increases as compared with the normal Q-switched case. We were able to obtain pulses as long as 1～μs.

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