本文利用偏心静电单探针诊断了反应室内的等离子体密度的空间分布；由Telystep-Hobbso轮廓仪研究了ECR-PECVD制备的Si3N4薄膜的表面特性．结果表明ECR-PECVD制备的氮化硅薄膜是一种表面均匀平整度好的薄膜．
The spatial distribution of the ECR plasma density in the reaction chamber has been measured by using a eccentric langmuir probe. The surface roughness characteristic of Si3N4 thin film has been researched with the profilometer Telystep-Hobbson. The results show the surface of this kind of thin film made by ECR-PECVD technology is very smooth.
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