欢迎登录材料期刊网

材料期刊网

高级检索

运用量子力学密度矩阵算符理论,推导出在一种特殊非对称量子阱中的光整流系数的解析表达式.最后利用典型的GaAs/AlGaAs非对称量子阱进行数值计算,得到了系统的非线性光整流效应和量子阱的非对称性以及入射光子能量之间的变化规律,并在此特殊量子阱中得到了较大的光整流系数,从而为实验上制作较好的非线性材料提供了一种可行的途径.

参考文献

[1] Gurnick M K, Detemple T A. Synthetic nonlinear semiconductors [J]. IEEE J Quantum Electron, 1983, QE-19(5): 791-794
[2] Yuh P F, Wang K L. Optical second-order susceptibility of asymmetric coupled-well structures in the exciton region [J]. Appl. Phys., 1989, 65 (1): 4377-4381
[3] Rosencher E, Bois Ph. Model system for optical nonlinearities:Asymmetric quantum wells [J]. Phys. Rev., 1991,B44 (20): 1135-1137
[4] Ahn D, Chuang S L. Calculation of linear and nonlinear intersubband optical absorptions in a quantum well model with an applied electric field [J]. IEEE J Quantum Electron, 1987, QE-23 (12): 2196-2204
[5] Fejer M M, Yoo S J B, Byer R L, et al. Electric field dependence of optical absorption near the band gap of quantum well structure [J]. Phys. Rev. Lett., 62 (1989) 5:1041-1045
[6] Guo K X, Gu S W. Nonlinear optical rectification in parabolic quantum wells with an applied electric field [J].Phys. Rev., 1993, B47 (24) 16322-16325
[7] Atanasov R, Bassani F. The optical properties of AlGaAs/GaAs hyperbolic quantum-well structures [J]. Phys.Rev., 1992, B50 (11): 7809-7817
[8] Dingle R, Wiegmanm W, Henry C H. Quantum states of confined carriers in very thin AlxTa1-xAs-GaAsAlxGa1-xAs heterostructures [J]. Phys. Rev. Lett., 1974, 33 (7): 827-830
[9] Khurgin J. Second-order intersubband nonlinear optical susceptibilities of asymmetric quantum well structures [C] // Optical Society of America, Washington, D C, 1989. 69-72
[10] Wang G H, Guo K X. Second-order nonlinear optical susceptibility of a special asymmetric quantum well [J].Acta Photonica Sinica(光子学报),2001,30(11):1314-1317(in Chinese)
[11] Su R K.Quantum Mechanics(量子力学)[M].Shanghai:Fudan University Press,1997.61-102(in Chinese)
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%