本文较为全面的阐述了近几年来国内外对长波段掺铒光纤放大器(L-band EDFA)的研究情况,从设计EDFA最主要的技术关键-铒光纤与泵浦源两方面分析了其工作原理,总结出新的设计思路与方案,并提出了一些新的研究点.同时,也分析、介绍了一些结构新颖的宽带(C+L band)EDFA.
参考文献
[1] | Flood F A. L-band erbium-doped fiber amplifiers [C]// OFC'2000, WG1-2, 2000 |
[2] | Luo Jie,Ye Peida. Design consideration of erbium-doped fiber for efficient L-band EDFAs [J]. Acta Photonica Sinica (光子学报), 2000, 29(12): 1138-1140 (in Chinese) |
[3] | Tanaka S, Imai K, Yazaki T, et al. Ultral-wideband L-band EDFA using phosphorus co-doped silica-fiber [C]//OFC'2002, Th J3, 2002, 458-459 |
[4] | Li Qian, Davide F, Benjamin S D, et al. Gain-flattened, extended L-band (1570~1620 nm) high power, low noise erbium-doped fiber amplifiers [C]// OFC'2002, Th J4, 2002, 459-461 |
[5] | Flood, et al. Tech. Digest OAA '99 WD3-1 [C]//1999, 54-57 |
[6] | Di Muro R. Dependce of L-band amplifier efficiency on pump wavelength and amplifier design [C]// OFC'2000,WG7-2, 2000 |
[7] | Choi B H, Park H H, Chu M, et al. High-gain coefficient long-wave-band erbium-doped fiber amplifier using 1530 nm band [J]. IEEE Photonics Technology Letters, 2001, 13(2): 109-111 |
[8] | Yamashita T, Sawada H, Yoshida M, et al. High efficiency amplification of EDFA using a pump wavelength of the 1.53μm region [C]//ECOC'2000, 2000 |
[9] | Massicott J F, Wyatt R Ainslic B J. Low noise operation of Er3+ doped silica fiber amplifier around 1.6 μm [J].Electronics Letters, 1992, 28(20): 1924-1925 |
[10] | Yeniay A, Gao Renyuan. L-band EDFA gain and gain flatness enhancement via co-propagating C-band seed technique [C]// ECOC'2001-Amsterdam, Tu.L.3.1, 2001, 224-225 |
[11] | Yeniay A, Gao Renyuan. Single stage high power L-band EDFA with multiple C-band seeds [C]//OFC'2002, ThJ2,2002, 457-458 |
[12] | Yamashita S, Nishihara M. L-band erbium-doped fiber amplifier incorporating an inline fiber grating laser [J].IEEE Journal on Selected Topics in Quantum Electronics, 2001, 7(1): 44-48 |
[13] | Bumki M, Hosung Y, Jae L W, et al. Coupled structure for wide-band EDFA with gain and noise figure improvement from C to L-band ASE injection [J]. IEEE Photonics Technology Letters, 2000, 12(5): 480-482 |
[14] | Mahdi M A, Ahmad H. Gain enhanced L-band Er3+-doped fiber amplifier utilizing unwanted backward ASE [J].IEEE Photonics Technology Letters, 2001, 13(10): 1067-1069 |
[15] | Rodolfo D M, Lowe D, Wilson S. Broad-band amplification using a novel amplifier topology [J]. IEEE Photonics Technology Letters, 2001, 13(10): 1073-1075 |
[16] | Hwang S, Song K W, et al. Broad-band erbium-doped fiber amplifier with double-pass configuration [J]. IEEE Photonics Technology Letters, 2001, 13(12): 1289-1291 |
[17] | Hwang S, Song K W, Song K U, et al. Comparative high power conversion efficiency of C- plus L-band EDFA [J].Electronics Letters, 2001, 37(25): 1539-1541 |
[18] | Sugimoto R, Aizawa T, Sakai T, et al. High-power double-band EDFA with simple configuration [C]//ECOC'99,1999, 276-277 |
[19] | Bolshtyansky M, DeMarco J, Wysocki P. Flat, adjustable hybrid optical amplifier for 1610~1640 nm band [C]//OFC'2002, Th J5, 2002, 461-463 |
[20] | Flood E A. Comparision of temperature dependence in C-band and L-band EDFAs [J]. Journal of Lightwave Technology, 2001, 19 (4): 527-535 |
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