我们将SiGe合金在干氧吹气环境下以不同的温度和不同的时值进行氧化处理,用卢摄福散射仪RBS和高精度椭偏仪HP-ESM测量样品,获得10～80nm厚的硅氧化层和1 nm厚的富锗层.新发现快速氧化生成的氧化膜表面有1～2 nm厚的锗层.分析了锗纳米结构对应的PL发光谱,注意到锗纳米层对应的541 nm波长的尖锐的发光峰和不同尺寸的锗原子团对应的从550～720 nm波长的发光带.从量子受限模型和局域密度泛函计算出发,合理地解释了实验的结果.
We investigate the oxidation behavior of Si1-xGex alloys (x=0.05, 0.15, and 0.25). The thickness of nanolayers and property of nanoparticles in oxide films after oxidation in O2 (dry) atmosphere at different temperature and for various lengths of time are measured with the high precision ellipsometer, the Rutherford backscattering spectrometry and high-resolution scanning transmission electron microscopy. It was found that rejection of Ge from oxide layer results in piling up Ge at the interface between the growing SiO2 and the remaining SiGe, which forms a nanometer Ge-rich layer. We find a nanometer cap layer over the oxide film after fast oxidation, in which there are many Ge nanoparticles. Some new peaks in PL spectra related to the nanolayer and various kinds of nanostructure are discovered. We provide a quantum confinement model to analyze the PL spectra and the mechanism of nanostructure of the oxide and Ge segregation.
参考文献
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