采用抛物势作为量子点对电子有效约束势,使用有限差分法对Schrodinger-Poisson方程进行离散化,根据自旋密度泛函,进行数值自洽求解,得到三维正方体GaAs量子点电子总基态能、电子密度等电子特性,并与相同条件(电子数、自旋、尺寸)的二维正方形GaAs量子点的电子密度进行了对比.
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