长波长GaInNAs垂直腔面发射激光器

量子电子学报 , 2004, 21(5): 565-570. doi: 10.3969/j.issn.1007-5461.2004.05.004

长波长GaInNAs垂直腔面发射激光器

晏长岭 ^1, , 秦莉 ^2, , 张淑敏 ^3, , 宁永强 ^4, , 王青 ^5, , 赵路民 ^6, , 刘云 ^7, , 王立军 ^8,

1.中国科学院激发态物理重点实验室,中国科学院长春光学精密机械与物理研究所,吉林,长春,130021;长春理工大学高功率半导体激光国家重点实验室,吉林,长春,130022

2.中国科学院激发态物理重点实验室,中国科学院长春光学精密机械与物理研究所,吉林,长春,130021

3.吉林大学高等学校化学学报,吉林,长春,130023

4.中国科学院激发态物理重点实验室,中国科学院长春光学精密机械与物理研究所,吉林,长春,130021

5.中国科学院激发态物理重点实验室,中国科学院长春光学精密机械与物理研究所,吉林,长春,130021

6.中国科学院激发态物理重点实验室,中国科学院长春光学精密机械与物理研究所,吉林,长春,130021

7.中国科学院激发态物理重点实验室,中国科学院长春光学精密机械与物理研究所,吉林,长春,130021

8.中国科学院激发态物理重点实验室,中国科学院长春光学精密机械与物理研究所,吉林,长春,130021

基金项目: 中国科学院知识创新工程项目国家自然科学基金(10104016,60306004)

关键词：激光技术 , 长波长激光 , GaInNAs , 垂直腔面发射激光器(VCSEL)

Long-wavelength GaInNAs vertical-cavity surface-emitting lasers

新出现的直接跃迁GaInNAs与具有高反射率的AlAs/GaAs分布布拉格反射镜相结合构成了GaAs基长波长(1.3～1.6μm)垂直腔面发射激光器(VCSEL),将成为光纤通信、光互联和光信息处理等的关键元件.本文从材料的选取、外延技术和GaInNAs VCSEL国外和国内的发展状况等方面对长波长GaInNAs VCSEL进行了综合阐述.

参考文献

[1]	Wiedenmann D,King R,Jung C,et al.Design and analysis of single-mode oxidized VCSEL's for high-speed optical interconnects [J].IEEE J.Select.Topics in Quantum Electron,1999,5(3):503-511.
[2]	Babic D I,Piprek J,Streubel K,et al.Design and analysis of double-fused 1.55 μm vertical-cavity lasers [J].IEEE J.Quantum Electron,1997,33:1369-1383.
[3]	Lin H C,Chua L C,Zhu H Z,et al.Photopumped long wavelength vertical-cavity surface-emitting lasers using strain-compensated multiple quantum wells [J].Appl.Phys.Lett,1994,64(25):3395-3397.
[4]	Kondow M,Uomi K,Niwa A,et al.GaInNAs:a novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].Japan.J.Appl.Phys,1996,35:1273-1275.
[5]	Jayaraman V,Goodnough T J,Beam T L,et al.Continous-wave operation of single-transverse-mode 1310 nm VCSELs up to 115 ℃ [J].IEEE Photonics Technol.Lett,2000,12:1595-1597.
[6]	Hall E,Nakagawa S,Almuneasu G,et al.Room temperature,CW operation of lattice-matched long-wavelength VCSELs [J].Electron.Lett,2000,36:1465-1467.
[7]	Lott J A,Ledentsov N N,Ustinov V M,et al.InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3μm [J].Electron.Lett,2000,36:1384-1385.
[8]	Larson M C,Kondow M,Kitatani T,et al.GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes [J].IEEE Photonics Technol.Lett,1998,10:188-190.
[9]	Klem F J,Serkland K D,Geib M K.Advances in 1300 nm InGaAsN Quantum Well VCSELs [A].Proc.SPIE,2002,4646:137-144.
[10]	Kageyama T,Miyamoto T,Makino S,et al.Room temperature continuous-wave operation of GaInNAs/GaAs VCSELS grown by chemcial beam epitaxy with output power exceeding 1 mW [J].Electron.Lett,2001,37:225-226.
[11]	Anan T,Yamada M,Nishi K,et al.Continous wave operation of 1.3 GaAsSb/GaAs VCSELs [J].Electron.Lett,2001,37:566-567.
[12]	Ramakrishnan A,Steinle G,Degen C et al.Electrically pumped 10 Gbit s-1 MOVPE grown monolithical 1.3 m VCSEL with GaInNAs active region Electron [J].Lett,2002,38:1369-83.
[13]	Coldren C W,Larson M C,Spruytte S G et al.1200nm GaAs Based Vertical Cavity Lasers Employing GaInNAs Multiple Quantum Well Active Regions [J].Electron.Lett,2000,36:951-952.
[14]	Jackson A W,Naone R L,Dalberth M J,et al.OC-48 capable InGaAsN vertical cavity lasers [J].Electron.Lett,2001,37:355-356.
[15]	Steinle G,Riechert H,Egorov A Yu.Monolithic VCSEL with InGaAsN active region emitting at 1.28μm and CW output power exceeding 500μW at room temperature [J].Electron.Lett,2001,37:93-95.
[16]	Ling Xianggan,Pan Zhong.Anomalous temperature dependence of photoluminescence in GaInNAs/GaAs multiple quantum wells [J].Chin.Phys.Lett,2002,19(8):1203-1206.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网