不同退火温度下金属/4H-SiC Schottky势垒高度的研究

量子电子学报 , 2005, 22(2): 251-255. doi: 10.3969/j.issn.1007-5461.2005.02.024

不同退火温度下金属/4H-SiC Schottky势垒高度的研究

杨克勤 ^1, , 陈厦平 ^2, , 杨伟锋 ^3, , 孔令民 ^4, , 蔡加法 ^5, , 林雪娇 ^6, , 吴正云 ^7,

1.厦门大学物理系,福建,厦门,361005

2.厦门大学物理系,福建,厦门,361005

3.厦门大学物理系,福建,厦门,361005

4.厦门大学物理系,福建,厦门,361005

5.厦门大学物理系,福建,厦门,361005

6.厦门大学物理系,福建,厦门,361005

7.厦门大学物理系,福建,厦门,361005;厦门大学萨本栋微机电中心,福建,厦门,361005

基金项目: 福建省厦门市科技计划项目(3502Z20031076)

关键词：光电子学 , 4H-SiC , Schottky势垒高度 , 退火

Study on Schottky barrier of 4H-SiC at different anealing temperature

采用磁控溅射的方法在4H-SiC样品上分别沉积四种金属薄膜(Ag,Cu,Ni,Cr)形成Schottky接触,研究了不同温度退火对Schottky势垒高度的影响.通过对样品的I-V测试结果的拟合,得到各金属/4H-SiC Schottky接触的势垒高度以及理想因子.在反向偏压100V下,样品的反向漏电流小于10-10A,说明样品的反向特性良好.样品经过不同温度的退火后,发现Cu、Ni与4H-SiC的势垒高度(SBH)随退火温度的升高而提高,超过某一温度,其整流特性变差;Ag、Cr的SBH在退火后降低.SBH与金属功函数呈线性关系(Cr金属除外),斜率为0.11.

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