低压MOCVD方法生长了掺Si与不掺Si的AlGaInP/GaInP多量子阱结构,运用X射线双晶衍射与光荧光技术研究了掺Si对量子阱性能的影响.测试结果表明掺Si使量子阱的生长速度增加,掺Si量子阱的光荧光强度比未掺Si量子阱的光荧光强度改善了一个数量级.
参考文献
| [1] | Chong Y L, Meng C W, Wei L, et al. The influence of window layers on the performance of 650 nm AlGaInP/GaInP multinum-well light-emitting diodes [J]. Journal of Crystal Growth, 1999, 200: 382-390. |
| [2] | Hatakoshi G, Itaya K, Ishikawa M, et al. Short-wavelength InGaAlP visible laser diodes [J]. IEEE J. Quantum Electron., 1991, 27: 1476-1482. |
| [3] | Hamada H, Shono M, Honda S, et al. AlGaInP visible laser diodes grown on misoriented substrates [J]. IEEE J.Quantum Electron., 1991, 27: 1483-1490. |
| [4] | Hashimoto J, Tatsuyama K, Shinkai J, et al. Highly stable operation of AlGaInP/GaInP strained multiquantum well visible laser diodes [J]. Electron. Lett., 1992, 28: 1329-1330. |
| [5] | Mierry P De, Beaumont B, Feltin E, et al. Influence of the Mg procursor on the incorporation of Mg in MOVPE grown GaN [J]. MRS Internet J. Nitride Emicond. Res., 2000, 5: 8. |
| [6] | Li Shuti, Jiang Fengyi, L Mo Chunlan, et al. The influence of Si-doping to the growth rate and yellow luminescence of GaN grown by MOCVD [J]. J. Luminesecence, 2001, 93: 321-326. |
| [7] | L Sang-M, S Tae-Y, Lee R T, et al. Effects of Si doping on ordering and domain structures in GaInP [J]. Applied Surface Science, 2000, 158: 223-228. |
| [8] | Sun Z Z, Yoon S F, Loke K W. Electrical properties of silicon-and beryllium-doped GaInP and (AlGa)InP grown by solid source molecular beam epitaxy [J]. Journal of Crystal Growth, 2002, 235: 8-14. |
| [9] | Delong M C, Mowbray D J, Hogg A R, et al. Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52Ino.48P [J]. J. Appl. Phys., 1993, 73(10): 5163-5172. |
| [10] | Schneider R P, Jones J E D, Follstaedt D M. Growth and characterization of GaInP unicompositional disoederorder-disorder quantum wells [J]. Appl. Phys. Lett., 1994, 65(5): 587-590. |
| [11] | Wang T, Saeki H, Bai J, et al. Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures [J]. Appl. Phys. Lett., 2000, 76: 1737-1739. |
| [12] | Yong H C, Song J J, Keller S, et al. Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells [J]. Appl. Phys. Lett., 1998, 73: 1128-1130. |
| [13] | Uchida K, Tang T, Goto S, et al. Spiral growth of InGaN/InGaN quantum wells due to Si doping in the barrier layers [J]. Appl. Phys. Lett., 1999, 74: 1153-1155. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%