在修正的随机元素等位移-MREI模型的基础上建立了一个新模型,计算了AB1-xCx型Ⅲ-Ⅴ族半导体混晶的长波长光学声子模频率的组分变化关系.模型中假设次邻力常数远小于近邻力常数,同时,运用离子晶体结合的重叠排斥能,估算出两个近邻力常数随组分x呈负幂指数变化,而非常规的线性变化.最后比较了AsAl1-xGax、GaP1-xAsx和SbAl1-xGax三种混晶的理论结果和实验数据,两者符合较好.
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