GaN基LED的表面电流扩展对于器件的特性起着很重要的作用.制作环状N电极的器件在正向电压、总辐射功率、器件老化等特性方面较普通的电极都有很大的提高.通过一系列的实验对环状N电极和普通电极进行了比较,在外加正向电流为20 mA时,正向电压减小了6%,总辐射功率也略有提高,工作50小时后,总辐射功率相差8%,验证了环状N电极结构有利于器件电流扩展,减少器件串联电阻,减少了焦耳热的产生,提高了LED电光特性和可靠性.
参考文献
| [1] | Wen Shangsheng.Progress in the study of high brightness blue GaN-based LEDs[J].Chinese Journal of Quantum Eledtronics (量子电子学报),2003,23(1):10-17. |
| [2] | Brukilacchio T,DeMilo C.Beyond the limitations of today's LED packages:optimizing high brightness LED performance by a comprehensive systems design approach[C] // Proc.of SPIE,2004,5366:161-172. |
| [3] | Bremser M,Luenenbuerger M,Protzmann H.Highly efficient InGaN/GaN MQW for blue and green light emitting structures grown in production MOVPE reactors[C] //Proc.of SPIE,2000,3938,100. |
| [4] | Venugopalana H S,Gaoa X,Zhang T,et al.Fabrication of high-lumen InGaN flip chip LEDs[C] // Proc.of SPIE,2004,5187:260-266. |
| [5] | Fujii T,Gao Y,Sharma R.Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening[J].Appl.Phys.Lett.,2004,84(6):L855. |
| [6] | Krames M R,Ochiai-Holcomb M,Hofler G E.High-power truncated-inverted-pyramid.(AlxGa1-x)0.5 In0.5P/GaP light-emitting diodes exhibiting ＞50% external quantum efficiency[J].Appl.Phys.Lett.,1999,75(16):L2365. |
| [7] | Long Le.Packaging structure and tchnology of LED[J].Eledtronics & Packaging (电子与封装),2004,14(4):L24-L28 (in Chinese). |
| [8] | Kim H,Lee Ji-Myon,Huh Chul.Modeling of a GaN-based light-emitting diode for uniform current spreading[J].Appl.Phys.Lett.,2000,77(12):L1903. |
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