制备了人工欧泊SiO2光子晶体模板并运用有机金属化学气相沉积(MOCVD)技术在SiO2光子晶体模板中生长填充了InP晶体.实验研究了不同成核温度(300℃,350℃,400℃)对于生长填充InP的影响.扫描电镜和反射谱分析结果显示,温度对于InP在SiO2光子晶体模板中的生长有重要影响.随着成核温度的升高,InP在SiO2光子晶体模板中的填充率随之降低.
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