利用532 nm连续激光对掺Si的n型砷化镓材料进行作用,材料的晶轴方向为〈100〉偏〈111A〉方向15°.实验观察到,连续激光与材料相互作用过程中,材料作用表面的反射光在观察屏上形成环状结构,认为是由夫琅和费衍射产生的,并首次提出将衍射作为探测材料损伤的方法.实验测得砷化镓的阈值损伤功率密度为2.56×105W/cm2.利用温度场的热传导方程计算获得材料的损伤阈值时间与入射光功率密度的关系曲线,并与实验曲线进行了比较.
参考文献
[1] | Amit Garg,Avinashi Kapoor,Tripathi K N.Laser-induced damage studies in GaAs[J].Optics & Laser Technology,2003,35(1):21-24. |
[2] | Jong Tde,Wang Z L,Saris F W.An experimental test of GaAs decomposition due to pulsed laser irradiation[J].Phys.Lett.A,1982,90(3):147-149. |
[3] | Amit Pratap Singh,Avinashi Kapoor,et al.Thermal and mechanical damage of GaAs in picosecond regime[J].Optics & Laser Technology,2001,33(6):363-369. |
[4] | Trelenberg T W,Dinh L N,Saw C K,et al.Femtosecond pulsed-laser ablation of GaAs[J].Applied Surface Science,2004,221(1-4):364-369. |
[5] | Meyer J R,Bartoli F J,Kruer M R.Optical heating in semiconductors[J].Physical Review B,1980,21(4):1559-1568. |
[6] | Yang Jianjun.Femtosecond laser 'cold' micro-machining and its advanced applications[J].Laser & Optoelectronics Progress (激光与光电子进展),2004,41(3):42-52 (in Chinese). |
[7] | Li Jiazhi.Chemical Principle of Semiconductors (半导体化学原理)[M].Beijing:Science Press,1980.43-44 (in Chinese). |
[8] | Shu Bohong,Hou Jing,Lu Qisheng,et al.Experimental study of the interaction between laser and GaAs[J].Infrared and Laser Engineering (红外与激光工程),1999,28(1):40-42 (in Chinese). |
[9] | Sun Chengwei,Lu Qisheng,et al.Laser Radiation Effect (激光辐照效应)[M].Beijing:National defense industry Press,2002.32-40 (in Chinese). |
[10] | Adams A R.Characteristic of GaAs (砷化镓的性质)[M].Beijing:Science Press,1990.7-9 (in Chinese). |
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