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采用密度矩阵的方法进行数值模拟计算紧束缚态的半导体单量子点的增益与吸收行为.其动力学数值结果显示,在某些不同时刻的增益谷和吸收峰的左右分布保持不变对称性,且有上下镜像反转的现象发生;在在长时间演化中发现该量子点系统的增益与吸收发生激烈的振荡而呈现出了量子光学中典型的崩塌与复苏的有趣物理现象.

参考文献

[1] Satio H,et al.Low chirp obliged in directly modulated quantum dot lasers[J].IEEE Photonics Technology Lett.,2000,12(10):1298-1300.
[2] Mukai K,et al.1.3mm lasing characteristics of self-assembled in GaAs-GaAs quorum dots[J].IEEE Journal of Quantum Electronics,2000,36 (4):472-478.
[3] Wang Zhanguo,et al.Self-assembled quantum dots,wires and quantum-dot lasers[J].Journal of Crystal Growth,2001,227-228:1132-1139.
[4] Wang R H,et al.Room-temperature operation of InAs quantum-dash laser on InP (001)[J].IEEE Photonics Technology Lette.,2001,13(8):767-769.
[5] Yah Z B,Guo Z N.New progress of exciton condensation in coupled quantum wells[J].Chinese Journal of Quantum Electronics (量子电子学报),2006,23(6):759-765 (in Chinese).
[6] Zhang L Y,Liu Z D.The absorption and dispersion for probe laser in the four-level Y-type atom system[J].Acta Phys.Sin.(物理学报),2005,54:3641 (in Chinese).
[7] Hu Y Z,Koch S W,Lindberg M,et al.Biexcitons in semiconductor quantum dots[J].Phys.Rev.Left.,1997,64:1805.
[8] Efros A L,Efros A.Interband absorption of light in a semiconductor sphere[J].Sov.Phys.Semicond.,1982,16:772.
[9] Banyai L,Koch S W.Semiconductor Quantum Dots[M].World-Scientific,Singapore,1993.Chaps 1-5.
[10] Peyghambarian N,Koch S W,Mysrowicz A.Introduction to Semiconductor Optics New Jersy:Prentice,1993.235-253.
[11] Liu C D,Su X Y.Dynamical localization of an exciton in an asymmetric quantum dot molecule[J].Chinese Journal of Quantum Electronics (量子电子学报),2005,22(6):927-931 (in Chinese).
[12] Tomoyuki A,Haruhiko K,et al.Nonlinear gain dynamics in quantum-dot optical amplifiers and its application to optical communication devices[J].IEEE Journal of Quantum Electronics,2001,37(8):1059-1065.
[13] Tian Q,Shen J Y,et al.Two-photon absorption of the biexcition in semiconductor quantum dots[J].Journal of Beijing Normal University (Natural Science Edition) (北京师范大学学报(自然科学版)),2004,40(3):338 (in Chinese).
[14] Li Yaoyi,Cheng Mutian,Zhou Huijun,et al.Eficiency of single photon emission in three-level system ofsemiconductor quantum dots with pulsed excitation[J].Acta Phys.Sin.(物理学报),2006,55(4):1781 (in Chinese).
[15] Hu Y Z,Lindberg M,Koch S W.Theory of optically excited intrinsic semiconductor quantum dots[J].Phys.Rev.B,1990,42:1713.
[16] Blombergen N,Shen Y R.Quantum-theoretical comparison of nonlinear susceptibilities in parametric media,lasers,and Raman lasers[J].Phys.Rev.,1964,133:A37.
[17] Chen J,Liu Z D,You S P.The hole burning and optical bistability of Quasi-A-type four-level atom system[J].Acta Phys.Sin.(物理学报),2006,55:6410 (in chinese).
[18] Herz K,et al.Biexciton formation in Cd《,χ》Zn《,1-《,χ》Se/ZnSe quantum-dot and quantum-well structures[J].Phys.Rev.B,1997,56:15261.
[19] Oreistein J,Baker G L.Photogenerated gap states in polyacetylene[J].Phys.Rev.Lett.,1982,49:1043-1046.
[20] Shunsuke Adachi,et al.Excitation of a breather model of bound soliton pairs in trans-polyacetylene by sub-five-femtosecond optical pulses[J].Phys.Rev.Lett.,2002,89:027401.
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