利用溶胶凝胶法在石英衬底上采用旋涂法制备出ZnO薄膜,通过X射线衍射仪发现不同的退火温度对ZnO薄膜的择优取向有很大影响;通过紫外可见分光光度计和室温发光谱可以看出,制备的薄膜有很好的光学透过性和很强的紫外发光特性,而不同的退火温度对其光学性质有很大的影响.实验发现采用此种方法在650℃左右退火是一个合适的退火温度,结构特性和光学性质都相对较好;采用热分析方法可知ZnO将在375℃左右从非晶转向结晶状态,因而在常规ZnO薄膜制备方法中增加一步500℃的热处理将有助于提高ZnO薄膜的结晶质量.
Zinc oxide films were deposited on fused quartz wafers using sol-gel technique and by adopting the spin-coating method. The structure of c-axis oriented ZnO films measured by X-ray diffraction is mainly decided by the post-annealing temperature. ZnO films annealed at different temperatures have a high transmittance and strong UV emission peaks which were measured by UV-VIS double-beam spectrophotometer and PL spectra. It is obvious that the annealing temperature at 650℃ is the best condition for high-quality ZnO film. The thermogravimetric analysis(TGA) of the sol was carried out, and it is found that the temperature from amorphous to more ordered state is 375℃, and crystal ZnO film is helpful to the deposition of ZnO film with high quality via the sol-gel method.
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