欢迎登录材料期刊网

材料期刊网

高级检索

采用Pekaur类型的变分方法,在抛物量子点中电子与体纵光学声子(LO)强耦合的条件下,得出了电子的基态,第一激发态的能量及相应的波函数.讨论了电子-声子耦合强度,量子点受限长度对电子在基态10>,激发态|1>,叠加态1/√2(|0)+|1>)时的概率密度分布的影响.结果显示叠加态时的概率密度随着电子声子耦合强度的增加而增大,随着量子点受限长度的减小而增大.该结果对以量子点制备量子比特有一定的指导意义.

On the condition of electron-LO phonon strong coupling in a parabolic quantum dot,the eigenenergies and eigenfuctions of the ground state and first excited state using variational method of Pekar type were obtained.The system in quantum dot may be employed as a two-level quantum system qubit.The relations on the electron-LO phonon strong coupling,the confinement length with the electron probability density were investigated.The results indicate that the electron probability density increases with increasing the electron-LO phonon strong coupling and decreasing the confinement length.The results are meaningful for preparing a qubit.

参考文献

[1] Johjnson N F,Quantum dots:few-body,low-dimensional systems[J].J.Phys.:Condens.,Matter.,1995,7(6):965-990.
[2] Hu Yiga,Yin Jiwen,Xiao Jinglin.Average number of optical phonons of weak-coupling impurity bound magnetopolaron in a parabolic quantum dot[J].Chinese Journal of Quantum Electronics(量子电子学报),2009,26(5):636-640(in Chinese).
[3] Senes M,Smith K L,Smeeton T N,et al.Strong carrier confinement in In_xGa_(1-x)N/GaN quantum dots grown by molecular beam epitaxy[J].Phys.Rev.B,2007,75(4):045314-1-5.
[4] Potz W,Control of the non-Markovian dynamics of a qubit[J].Appl.Phys.Lett.,2006,89(25):254102-1-3.
[5] Li Shushen,Wu Xiaoguang,Zheng Houzhi.Recent progress in solid-state quantum computing[J].Physics(物理),2004,33(6):404-408(in Chinese).
[6] Amico D.Quantum dot-based quantum buses for quantum computer hardware architecture[J].Irene.Microelectronics Journal,2006,37(12):1440-1441.
[7] LiSS,Xia J B,Yang F H,et al.InAs/GaAs single-electron quantum dot qubit[J].J.Appl.Phys.,2001,90(12):6151-6155.
[8] LiSS,Xia J B,Feng S L,et al.Quantum computing[J].Pro.Natl.Acad.Sci.USA,2001,98(21):11847-11850.
[9] Chow J M,Gambetta L,Tornberg J K,et al.Randomized benchmarking and process tomography for gate errors in a solid-state qubit[J].Phys.Rev.Lett.,2009,102(9):090502-090505.
[10] Riedmatten H D,Afzelius M,Staudt M U,et al.A solid-state lightmatter interface at the single-photon level[J].Nature,2008,456:773-777.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%