开展了CuBi3S5和CuBi3Se5两种化合物的合成研究,并首次报道了这两种化合物的基本光电性质.以水合肼(N2H4·H2O)为还原剂,以CuCl、BiCl3和S(或Se)为原料,通过溶剂热与固相反应相结合的方法成功制备了CuBi3S5和CuBi3Se5两种化合物的多晶.采用四点探针法获得了这两种化合物的电阻随温度变化的关系,结果表明: CuBi3Se5呈金属性质,而CuBi3S5呈半导体性质.根据Arrhenius关系式计算出CuBi3S5室温下的热激活能为17.1 meV.在室温下对CuBi3S5多晶块体进行了霍尔效应实验,结果表明:其载流子浓度为3.75×1017 cm-3,霍尔迁移率为14 cm2V-1s-1,CuBi3S5为n型半导体.漫反射光谱的实验结果表明CuBi3S5的禁带宽度约为0.66 eV.
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