欢迎登录材料期刊网

材料期刊网

高级检索

为了研究ZnO掺Sb后电子结构和光学性质的变化,采用基于密度泛函理论对纯净ZnO和Sb掺杂ZnO两种结构进行第一性原理的计算.计算结果表明:随着Sb的掺入,体系的晶格常数变大,键长增加,体积变大,系统总能增大.能带中价带和导带数目明显变密,费米能级进入导带,体系逐渐呈金属性,带隙明显展宽.在光学性质方面,主吸收峰的左边出现了新的吸收峰,是由导带上的Zn-4s和Sb-5p轨道杂化电子跃迁所致;同时介电函数虚部波峰发生一定程度的升高,实部静态介电常数也明显增大.

参考文献

[1] Ozgur U,Ya I Alivov,Liu C,et al.A comprehensive review of ZnO materials and devices[J].J.Appl.Phys.,2005,98(4):041301-1-103.
[2] Zhang Jiming,Liao Yuan,Zhang Wutang,et al. Growth and properties of ZnO film on CVD diamond film by pulsed laser deposition[J].Chinese Journal of Quantum Electronics(量子电子学报),2008,25(2):240-245 (in Chinese).
[3] Jin Yunjiang,Yu Qingxuan,Liu Shujian,et al. Effect of the structures on the enhancement of ultra-violet photoluminescence intensity in Ag doped ZnO film[J].Chinese Journal of Quantum Electronics(量子电子学报),2008,25(1):43-48 (in Chinese).
[4] Hu Zhixiang,Wu Yuxi,Li Teng,et al.Varying characteristics of crystal structure and optical properties of ZnO under pressure[J].Chinese Journal of Quantum Electronics(量子电子学报),2010,27(5):613-619 (in Chinese).
[5] Ding Ping,Pan Xinhua,Ye Zhizhen.Electrical and optical properties of Sb-doped ZnO thin films[J].Journal of Chongqing University of Technology (Natural Science)(重庆理工大学学报),2010,24(5):50-53 (in Chinese).
[6] Du Guangfen,Zuo Jian,Li Fuli,et al.Study on photoluminescence of Sb-doped ZnO nanocrystallites[J].Chinese Journal of Light Scattering(光散射学报),2004,16(1):63-65 (in Chinese).
[7] Zhang Lihua,Wang Zichen,et al.Properties of ZnO nanocrystalline sensitive materials of doped Sb[J].Chinese Journal of Materials Research(材料研究学报),1994,8(4):348-351 (in Chinese).
[8] Chang Chunrong,Li Ziquan,Xu Yunyun.Effect of Sb2O3-doped on optical absorption of ZnO thin film[J].Journal of Optoelectronics Laser,2006,17(1):41-44.
[9] Zhang Fuchun,Zhang Zhiyong,Zhang Weihu,et al.Frist-principles calculation of electronic structure and optical properties of Sb-doped ZnO[J].Chin.Phys.Lett.,2008,25(10):3735-3738.
[10] Segall M D,Lindan P J D,et al.Frist principles simulation:ideas,illustrations and the CaSTEP code[J].J.Phys.Cond.Matt.,2002,14 (11):2717-2744.
[11] Perdew J,Burke K,Ernzerhof M.Generalized gradient approximation made simple[J].Phys.Rev.Lett.,1996,77(18):3865-3868.
[12] Monkhorst H J,Pack J D.Special points for Brillouin-zone integrations[J].Phys.Rev.B,1976,13(12):5188-5192.
[13] Gao Xiaoqi,Guo Zhiyou,et al.The electronic stucture and optical properties of Al-N codoped ZnO[J].Chinese Journal of Luminescence(发光学报), 2010,31(4):509-514 (in Chinese).
[14] Shen Yibin,Zhou Xun,Xu Ming,et al.Electronic stucture and optical properties of ZnO doped with transition metals[J].Acta Physica Sinica(物理学报),2007,56(6):3440-3445 (in Chinese).
[15] Duan Manyi,Xu Ming,et al.First-principles study on the electronic stucture and optical properties of ZnO doped with transition metals and N[J].Acta Physica Sinica(物理学报),2007,56(9):5359-5365 (in Chinese).
[16] Baraff G A,Schluter M.Migration of interstitials in silicon[J].Phys.Rev.B,1984,30(6):3460-3469.
[17] Del Sole R,Girlanda R.Optical properties semiconductors within independent-quasiparticle approximation[J].Phys.Rev.B,1993,48(16):11789-11795.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%