通过分析量子级联激光器(QCL)中各量子阱的生热及阱间的热流输运情况,得到它的热输运方程,以此为基础类比电路理论建立了等效电路模型,利用计算软件分别进行理论与电路模拟,得到了它的生热特性,并对可能影响其生热特性的一些因素进行了分析.
参考文献
| [1] | Cao Juncheng.Semiconductor Terahertz Source,Detector,and Application(半导体太赫兹源、探测器与应用)[M].Beijing:Science Press,2012:187-240 (in Chinese). |
| [2] | Huang Kun.Solid State Physics(固体物理)[M].Beijing:Press of Higher Education,2010:35-67 (in Chinese). |
| [3] | Huang Dexiu.Semiconductor Optoeleetronics Materials (半导体光电材料)[M].Beijing:Press of University of Electronic Science and Technology,1994:68-90 (in Chinese). |
| [4] | Jiang Jianping.Semiconductor Lasers(半导体激光器)[M].Beijing:Publishing House of Electronics Industry,2000:109-128 (in Chinese). |
| [5] | Zhang Yueqing,Wang Lijun.Advances in Semiconductor Lasers(半导体激光器进展)[M].Beijing:Science Press,2002:192-195 (in Chinese). |
| [6] | Бar ПaвЛoвcкИИ,TexнИчecкoИ.тeПЛoФИ3ИкИ(热物理学)[M].Mocквa: прecc cтрoИтeЛьнoИ ИнДycтpИИ 1988:99-107 (in Russia). |
| [7] | Capasso F,Cho A Y.Band-gap engineering of semiconductor heterostructures by molecular beam epitaxy:Physics and applications[J].Surf.Science,1994,299/300:878-891. |
| [8] | Capasso F,Cox H M,Huthinson A L,et al.Pseudo-quaternary GaInAsP semiconductors:A new Ga0.47In0.53 As/InP graded gap superlattice and its applications to avalanche photodiodes[J].Appl.Phys.Lett.,1984,45(11):1193-1195. |
| [9] | Wu Wenguang,Fan Guanghan,Chen Chugui.Circuit model of quantum cascade lasers[J].Chinese Journal of Quantum Electronics(量子电子学报),2005,22(3):431-435 (in Chinese). |
| [10] | Rafailov M K.Ultrafast bandgap photonics[C].Proc.of SPIE,2011,8031:803128. |
| [11] | Rafailov M K.Ultrafast bandgap photonics semiconductor phenomenology:Response to ultra-short pulse laser[C].Proc.of SPIE,2010,7780:778009. |
| [12] | Laird J S,Onoda S,Hirao T,et al.Simulation of impulse response degradation from irradiation induced trapping and recombination regions in an InGaAs on InP photodetector[J].Journal of Applied Physics,2008,104(8):84511. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%