研究了正切平方势阱中的子带光吸收,用量子力学中的密度矩阵算符理论和迭代法推导出了正切平方势阱中线性和三阶非线性光学吸收系数的解析表达式,并以典型的GaAs/AlGaAs正切平方量子阱为例进行数值计算.计算结果表明,该势阱中的势阱宽度b、势阱深度V0和入射光强I对吸收系数有很大影响.随着势阱宽度b的增加和势阱深度V0的减小,总吸收系数的峰值减小并且向低能方向移动.随着入射光强I的增加,总吸收系数会减小,出现了光饱和吸收现象,同时吸收谱线的线宽随着入射光强的增大而增大.
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