给出了可控制静电双阱方案的静电场分布与几何参数的关系及囚禁中心位置与系统参数的依赖关系并作相关分析.研究表明,可通过改变方案的系统参数改变囚禁中心的位置、囚禁势阱的深度及势阱的体积,从而实现囚禁经过Stark减速器得到的冷分子,甚至通过选择合适的系统参数实现温度更高的冷分子囚禁.
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