NiTi形状记忆薄膜的溅射制备及晶化热处理工艺

1.华东师范大学物理系,上海,200062;南京大学固体微结构国家重点实验室,江苏南京,210008

2.南京大学固体微结构国家重点实验室,江苏南京,210008

3.南京大学固体微结构国家重点实验室,江苏南京,210008

基金项目: 国家自然科学基金(59672024) 上海市青年科技启明星计划(98QE14029)

Preparation and Annealing of Sputtered NiTi Shape Memory Thin Films

用磁控溅射法制备了MiTi非晶薄膜.薄膜无形状记忆效应.研究了经不同晶化热处理后的形状记忆效应,获得的最佳晶化热处理条件为500～700℃范围内晶化0.5h.

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