研究了铸造多晶硅中不同温度单步退火下氧沉淀的形成规律.实验发现,单步热处理工艺下铸造多晶硅中氧沉淀的形成规律和单晶硅的基本相似,但是在铸造多晶硅中形成氧沉淀的量明显高于直拉单晶硅中氧沉淀的量;在含高密度位错的单晶硅中形成氧沉淀的量远高于无位错单晶硅中氧沉淀的生成量,而有晶界的多晶硅中形成氧沉淀生成量仅稍微高于无晶界单晶硅中氧沉淀生成量.以上结果表明,铸造多晶硅中位错对氧沉淀的形成有明显的促进作用,而晶界则对氧沉淀的促进作用不是很显著.最后,基于实验结果讨论了铸造多晶硅中初始氧浓度,位错和晶界对氧沉淀影响的机理.
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