应用化学气相沉积(CVD)方法在铝表面形成SiOx陶瓷涂层,通过弯曲实验研究了涂层与基体的结合性能.利用扫描电子显微镜(SEM)观察了弯曲部位的表面形貌,弯曲过程表述为表面凹坑与内部孔洞联合长大,形成长条裂纹状沟槽或突脊,最后裂纹长大直至断裂.研究表明,基底与膜层结合良好,形成高结合力的原因是铝基底与表面SiOx膜层间过渡层中的Al-O与Si-O键合能很高,键合稳定.
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