采用RF磁控溅射法,在不同溅射功率下在玻璃衬底上制备了ZnO薄膜,并对所制备的ZnO薄膜在空气气氛中进行了不同温度(350-600℃)的退火处理.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)等研究了退火对不同溅射功率条件下制备的ZnO薄膜晶体性能和应力状态的影响.研究表明,在衬底没有预热的情况下,较低功率(190W)下制备的ZnO薄膜,当退火温度为500℃时,能获得单一c轴择优取向和最小半高宽,张应力在350℃退火时最小;较高功率(270W)下,薄膜最佳c轴取向和晶粒度在600℃退火温度获得,张应力最小的退火温度在350-500℃之间.当衬底预热至300℃时,退火处理对两种功率下制备的薄膜的结晶性能和应力的影响基本一致.
参考文献
| [1] | Jin-Bock Lee;Myung-Ho Lee;Chang-Kyun Park;Jin-Seok Park .Effects of lattice mismatches in ZnO/substrate structures on the orientations of ZnO films and characteristics of SAW devices[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2004(1):296-301. |
| [2] | F. Paraguay D.;M. Miki-Yoshida;J. Morales;J. Solis;W. Estrada L. .Influence of Al, In, Cu, Fe and Sn dopants on the response of thin film ZnO gas sensor to ethanol vapour[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2000(1/2):137-140. |
| [3] | Hong H K;Shin H W;Park H S et al.Gas identification using micro gas sensor array and neural-network pattern recognition[J].Sensors and Actuators B-Chemical,1996,33:68-71. |
| [4] | Kadota M.;Miura T.;Minakata M. .Piezoelectric and optical properties of ZnO films deposited by an electron-cyclotron-resonance sputtering system[J].Journal of Crystal Growth,2002(Pt.1):523-527. |
| [5] | Lee JC.;Kim SK.;Yoon KH.;Park IJ.;Song J.;Kang KH. .RF sputter deposition of the high-quality intrinsic and n-type ZnO window layers for Cu(In,Ga)Se-2-based solar cell applications[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2000(2):185-195. |
| [6] | W. T. Seeber;M. O. Abou-Helal;S. Barth;D. Beil;T. Hoche;H. H. Afify;S. E. Demian .Transparent semiconducting ZnO:Al thin films prepared by spray pyrolysis[J].Materials science in semiconductor processing,1999(1):45-55. |
| [7] | Kim HW;Kim NH .Preparation of GaN films on ZnO buffer layers by rf magnetron sputtering[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2004(1/4):192-197. |
| [8] | 贺洪波,范正修,姚振钰,汤兆胜.GaN蓝光材料新型ZnO /Si外延衬底的溅射沉积[J].中国科学E辑,2000(02):127-131. |
| [9] | 倪星元.平面磁控溅射氧化锌薄膜的几个问题[J].硅酸盐通报,1996(05):15-17. |
| [10] | Gupta V.;Mansingh A. .INFLUENCE OF POSTDEPOSITION ANNEALING ON THE STRUCTURAL AND OPTICAL PROPERTIES OF SPUTTERED ZINC OXIDE FILM[J].Journal of Applied Physics,1996(2):1063-1073. |
| [11] | Kim KS.;Kim HW.;Kim NH. .Structural characterization of ZnO films grown on SiO2 by the RF magnetron sputtering[J].Physica, B. Condensed Matter,2003(3/4):343-346. |
| [12] | 吕建国,叶志镇,黄靖云,赵炳辉,汪雷.退火处理对ZnO薄膜结晶性能的影响[J].半导体学报,2003(07):729-736. |
| [13] | Won Taeg Lim;Chang Hyo Lee .Highly oriented ZnO thin films deposited on Ru/Si substrates[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1999(12):12-15. |
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