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利用快速热处理(Rapid Thermal Processing,RTP)技术,成功制备了单晶硅太阳电池.在三个重要的热处理环节(磷扩散制作P-N结、热氧化、电极烧结)采用了快速热处理法,电极制作采用了丝网印刷.初步研究,用大面积的单晶硅片制备出转换效率为11%、开路电压为564.6 mV、短路电流密度为30.7 mA/cm2的太阳电池.

参考文献

[1] Campbell R B;Meier D L .Simultaneous junction formation using a directed energy light source[J].Journal of the Electrochemical Society,1986,133(10):2210-2211.
[2] Rohatgi A;Chen Z;Doshi P et al.High-efficiency silicon solar cells by rapid thermal processing[J].Applied Physics Letters,1994,65(16):2087-2089.
[3] Beyer A;Ebest G;Reich R .Metal-insulator-semiconductor solar cells with silicon oxynitrde tunnel insulator by using rapid thermal processing[J].Applied Physics Letters,1996,68(04):508-510.
[4] Parag Doshi;Ajeet Rohatgi .18% efficient silicon photovoltaic devices by rapid thermal diffusion and oxidation[J].IEEE Transactions on Electron Devices,1998(8):1710-1716.
[5] Stefan peters;Christophe Ballif;Dietmar Borchert .Record fast thermal processing of 17.5/100 efficient silicon solar cells[J].Semiconductor Science and Technology,2002(7):677-681.
[6] A. Rohatgi;D. S. Kim;K. Nakayashiki;V. Yelundur;B. Rounsaville .High-efficiency solar cells on edge-defined film-fed grown (18.2%) and string ribbon (17.8%) silicon by rapid thermal processing[J].Applied physics letters,2004(1):145-147.
[7] 查超麟,刘祖明,陈庭金,李景天,张忠文.RTP硅太阳电池的研究进展[J].云南师范大学学报(自然科学版),2003(04):25-33.
[8] Grabiec P B;Zagozdzon-Wosik W;Lux G .Kinetics of phosphorus proximity rapid thermal diffusion using spin-on dopant source for shallow junctions fabrication[J].Journal of Applied Physics,1995,78(01):204-211.
[9] Singh R;Cherukuri KC;Vedula L;Rohatgi A;Narayanan S;GEORGIA INST TECHNOL SCH ELECT ENGN ATLANTA GA 30332.;SOLAREX FREDERICK MD 21701. .Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing[J].Applied physics letters,1997(13):1700-1702.
[10] Vittorio Privitera;Francesco Priolo;Giovanni Mannino .The effect of reactive plasma etching on the transient enhanced diffusion of boron in silicon[J].Applied physics letters,1997(13/16):1834-1836.
[11] A. Stadler;T. Sulima;J. Schulze .Dopant diffusion during rapid thermal oxidation[J].Solid-State Electronics,2000(5):831-835.
[12] Horzel J.;Allebe C.;Szlufcik J.;Sivoththaman S. .Development of RTP for industrial solar cell processing[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2002(1/4):263-269.
[13] Johan F. Nijs;Jozef Szlufcik;Jozef Poortmans;S. Sivoththaman;Robert P. Mertens .Advanced manufacturing concepts for crystalline silicon solar cells[J].IEEE Transactions on Electron Devices,1999(10):1948-1969.
[14] Ajeet Rohatgi;Shreesh Narasimha;Abasifreke U. Ebong;Parag Doshi .Understanding and implementation of rapid thermal technologies for high-efficiency silicon solar cells[J].IEEE Transactions on Electron Devices,1999(10):1970-1977.
[15] Green M A;Blakers A W;Jiqun Shi et al.19.1% efficient silicon solar cell[J].Applied Physics Letters,1984,44(12):1163-1164.
[16] Hartiti B;Slaoui A;Muller J C et al.Phosphorus diffusion into silicon from a spin-on source using rapid thermal processing[J].Journal of Applied Physics,1992,71:5474-5478.
[17] Singh R;Sinha S;Thakur R P S et al.Some photoeffect roles in rapid isothermal processing[J].Applied Physics Letters,1991,58(11):1217-1219.
[18] 刘刚;余岳辉;史济群.半导体器件[M].北京:电子工业出版社,2000:187-188.
[19] 陈庭金,袁海荣,汪义川.工业化生产硅太阳电池的特性分析[J].半导体光电,1998(06):376.
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