通过傅立叶红外吸收光谱分析了不同温度和时间下在硅衬底上快速热氧化(RTO)处理后的样品.结果表明,在处理相同的时间下,随着热处理温度的升高,二氧化硅薄膜的非对称伸展振动模式峰强度增强,其峰位发生了偏移.在800℃下制备二氧化硅薄膜的热氧化动力学规律不同于1200℃下的情况.在800℃下,快速热氧化制备的薄膜中含有非化学计量比的氧化硅(SiOx),SiOxDE再氧化使得薄膜的氧化生长速率不断增加,同时也是导致红外吸收光谱中ASM峰位向长波数方向偏移.在1200℃下,快速热氧化制备的薄膜成份是二氧化硅,这种薄膜具有良好的介电性能.
参考文献
| [1] | 黄汉尧;李乃平.半导体器件工艺原理[M].北京:国防工业出版社,1983:64-71. |
| [2] | 刘秀喜;高大江.半导体器件制作工艺常用数据手册[M].北京:电子工业出版社,1992:113-118. |
| [3] | Mehrdad M;Moslehi;Steven C et al.Thin SiO2 insulators grown by rapid thermal oxidation of silicon[J].Applied Physics Letters,1985,47(12):1353-1355. |
| [4] | Chiou Y L;Sow C H;Li G et al.Growth characteristics of silicon dioxide produced by rapid thermal oxidation processes[J].Applied Physics Letters,1990,57(09):881-883. |
| [5] | Deal B E;Grove A S .General relationship of the thermal oxidation of silicon[J].Journal of Applied Physics,1965,36(12):3770-3778. |
| [6] | Irene E .Models for the oxidation of silicon[J].CRC Crit Rev Solid State Mater Sci,1988,14:175-181. |
| [7] | Balk P.The Si-SiO2 System[M].Elsevier Amsterdam,1988 |
| [8] | Guesv E P;Lu H C;Gustafsson T et al.Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scattering[J].Physical Review B:Condensed Matter,1995,52(03):1759-1775. |
| [9] | K. T. Queeney;M. K. Weldon;J. P. Chang .Infrared spectroscopic analysis of the Si/SiO_(2) interface structure of thermally oxidized silicon[J].Journal of Applied Physics,2000(3):1322-1330. |
| [10] | Devine R A B .Structural nature of the Si/SiO2 interface through infrared spectroscopy[J].Applied Physics Letters,1996,68(22):3108-3110. |
| [11] | Moslehi M M;Saraswat K C;Shatas S C.Rapid thermal growth of thin insulators on silicon[A].Los Angeles,1986 |
| [12] | Deaton R;Massoud H Z .Effects of thermally induced stresses on rapid thermal oxidation of silicon[J].Journal of Applied Physics,1991,70:3588-3592. |
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